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Ferhan, Abdul Rahim,Š,pacx30c,kovax301,, Barbora,Jackman, Joshua A.,Ma, Gamaliel J.,Sut, Tun Naw,Homola, Jirx30c,ix301,Cho, Nam-Joon American Chemical Society 2018 ANALYTICAL CHEMISTRY - Vol.90 No.21
<P>Unraveling the details of how supported lipid bilayers (SLBs) are coupled to oxide surfaces is experimentally challenging, and there is an outstanding need to develop highly surface-sensitive measurement strategies to determine SLB separation distances. Indeed, subtle variations in separation distance can be associated with significant differences in bilayer-substrate interaction energy. Herein, we report a nanoplasmonic ruler strategy to measure the absolute separation distance between SLBs and oxide surfaces. A localized surface plasmon resonance (LSPR) sensor was employed to track SLB formation onto titania- and silica-coated gold nanodisk arrays. To interpret measurement data, an analytical model relating the LSPR measurement response to bilayer-substrate separation distance was developed based on finite-difference time-domain (FDTD) simulations and theoretical calculations. The results indicate that there is a larger separation distance between SLBs and titania surfaces than silica surfaces, and the trend was consistent across three tested lipid compositions. We discuss these findings within the context of the interfacial forces underpinning bilayer-substrate interactions, and the nanoplasmonic ruler strategy provides the first direct experimental evidence comparing SLB separation distances on titania and silica surfaces.</P> [FIG OMISSION]</BR>
Murakami, Katsuhisa,Rommel, Mathias,Hudec, Boris,Rosovax301,, Alica,Huš,ekovax301,, Kristix301,na,Dobrocx30c,ka, Edmund,Rammula, Raul,Kasikov, Aarne,Han, Jeong Hwan,Lee, Woongkyu,Song, S American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.4
<P>Topography and leakage current maps of TiO<SUB>2</SUB> films grown by atomic layer deposition on RuO<SUB>2</SUB> electrodes using either a TiCl<SUB>4</SUB> or a Ti(O-i-C<SUB>3</SUB>H<SUB>7</SUB>)<SUB>4</SUB> precursor were characterized at nanoscale by conductive atomic force microscopy (CAFM). For both films, the leakage current flows mainly through elevated grains and not along grain boundaries. The overall CAFM leakage current is larger and more localized for the TiCl<SUB>4</SUB>-based films (0.63 nm capacitance equivalent oxide thickness, CET) compared to the Ti(O-i-C<SUB>3</SUB>H<SUB>7</SUB>)<SUB>4</SUB>-based films (0.68 nm CET). Both films have a physical thickness of ∼20 nm. The nanoscale leakage currents are consistent with macroscopic leakage currents from capacitor structures and are correlated with grain characteristics observed by topography maps and transmission electron microscopy as well as with X-ray diffraction.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2014/aamick.2014.6.issue-4/am4049139/production/images/medium/am-2013-049139_0008.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am4049139'>ACS Electronic Supporting Info</A></P>
Petykiewicz, Jan,Nam, Donguk,Sukhdeo, David S.,Gupta, Shashank,Buckley, Sonia,Piggott, Alexander Y.,Vucx30c,kovicx301,, Jelena,Saraswat, Krishna C. American Chemical Society 2016 NANO LETTERS Vol.16 No.4
<P>A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium nanowire light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudoheterostructure, and high-Q nanophotonic cavity. Our nanowire structure presents greatly enhanced photoluminescence into cavity modes with measured quality factors of up to 2000. By varying the dimensions of the germanium nanowire, we tune the emission wavelength over more than 400 nm with a single lithography step. We find reduced optical loss in optical cavities formed with germanium under high (>2.3%) tensile strain. Our compact, high-strain cavities open up new possibilities for low-threshold germanium based lasers for on-chip optical interconnects.</P>