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Epitaxially Grown Multilayer Nanocrystalline Si-O Structure for Silicon-on-Insulator Applications
서용진,R.Tsu 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.1
In this paper, monolayers of oxygen atoms are sandwiched between adjacent epitaxial silicon layers fabricated in order to investigate the possible replacement of silicon-on-insulator (SOI) for nano- CMOS (complementary metal-oxide semiconductor) devices of a future generation. This multi-layer Si-O superlattice forms a new type of superlattice, a semiconductor-atomic superlattice (SAS). According to the experimental results, cross-sectional high-resolution transmission electron microscopy (HRTEM) shows the epitaxial system. Also, the current-voltage (I-V) measurement results show a stable and good insulating behavior, with high breakdown voltage. It is apparent that the system may form an epitaxially-grown insulating layer as a possible replacement for SOI, a scheme investigated as a future generation of high-eciency and high-density CMOS on SOI. Since our scheme is epitaxial, three-dimensional integrated circuits (3D-ICs) may nally be realized in silicon-based technology.