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RISS 인기검색어
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- 저자 : Qingduan Meng (검색결과 2 건)
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Thermal buckling analysis in InSb focal plane arrays detector
Xiaoling Zhang,Qingduan Meng,Qian Yu,Liwen Zhang,Yanqiu Lv 대한기계학회 2013 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.27 No.6
When exploring the buckling mechanism in indium antimonide (InSb) detector, the global square checkerboard buckling pattern reappears in finite element simulation results. The contributions from the three layered materials to the deformations along the Z-direction are systematically analyzed. Analysis of results shows that the buckling deformation originated from the thermal difference between silicon readout integrated circuits (silicon-ROIC) and the intermediate layer directly above. Furthermore, the buckling pattern is determined by indium bumps array. After passing through the 10 μm intermediate layer, the deformation amplitude is significantly reduced from 2.23μm to 0.24 μm. Afterwards, passing upward through the 10 μm InSb chip, the maximal deformation is further decreased to 0.09 μm.
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Negative electrode structure design in InSb focal plane array detector for deformation reduction
Xiaoling Zhang,Qingduan Meng,Liwen Zhang,Yanqiu Lv 대한기계학회 2014 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.28 No.6
When an indium antimonide (InSb) infrared focal plane array (IRFPA) is subjected to a thermal shock test, most of the cracks originatefrom the region over the negative electrode, which restricts its final yield. In light of the proposed equivalent modeling, three negativeelectrode structures are assessed to eliminate the accumulated deformation around the negative electrode. Simulation results show thatwhen a thicker indium bump array is connected directly with negative InSb material, the accumulated thermal deformation is the minimum,the top surface of InSb chip is the smoothest, and the square checkerboard buckling pattern, present clearly in both gold bufferlayer and sparse thicker indium bump array structure, seems to be unclear. All these mean that a thicker indium bump array structure is agood choice, which will benefit to reduce fracture probability of InSb IRFPAs under thermal shock.
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