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        Substrate effects on the microstructure of hydrogenated amorphous carbon films

        I. Ahmad,S.S. Roy,Md.A. Rahman,T.I.T. Okpalugo,P.D. Maguire,J.A. McLaughlin 한국물리학회 2009 Current Applied Physics Vol.9 No.5

        In this work, plasma enhanced chemical vapour deposition was used to prepare hydrogenated amorphous carbon films (a-C:H) on different substrates over a wide range of thickness. In order to observe clear substrate effect the films were produced under identical growth conditions. Raman and near edge X-ray absorption fine structure (NEXAFS) spectroscopies were employed to probe the chemical bonding of the films. For the films deposited on silicon substrates, the Raman ID/IG ratio and G-peak positions were constant for most thickness. For metallic and polymeric substrates, these parameters increased with film thickness, suggesting a change from a sp3-bonded hydrogenated structure to a more sp2 network, NEXAFS results also indicate a higher sp2 content of a-C:H films grown on metals than silicon. The metals, which are poor carbide precursors, gave carbon films with low adhesion, easily delaminated from the substrate. The delamination can be decreased/eliminated by deposition of a thin ( ~10 nm) silicon layer on stainless steel substrates prior to a-C:H coatings. Additionally we noted the electrical resistivity decreased with thickness and higher dielectric breakdown strength for a-C:H on silicon substrate.

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