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Micromachined Si cantilever arrays for parallel AFM operation
안유민,Takahito Ono,Masayoshi Esashi 대한기계학회 2008 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.22 No.2
Silicon cantilever arrays with a very small pitch for parallel AFM operations were studied. We fabricated 1x104 in eight groups and 1x30 Si probe arrays and produced a smaller pitch (15 m) between probe tips by using Si anisotropic etching with a vertical wall shaped oxide mask. The vertical controls of Si probes were able to operate individually or in a group by integrating electrostatic actuators into the cantilevers of the probes. The fabricated Si cantilever arrays showed reasonable dynamic characteristics for the probe cantilever and reliable parallel operation of AFM.
Oh, Young-Taek,Sim, Jae-Min,Toan, Nguyen Van,Kino, Hisashi,Ono, Takahito,Tanaka, Tetsu,Song, Yun-Heub IEEE 2019 IEEE transactions on electron devices Vol.66 No.4
<P>The effects of the external stress on memory device characteristics are numerically discussed, and experimental observations are made, based on the wafer curvature method for extraction of stress. An analysis of the interface state is then performed. The external force applied to the device was controlled by depositing a metal film on the wafer backside; then, the residual stress induced on the substrate was extracted. We observed that the dangling bond generated by the residual stress increases the trap site and deteriorates the interface properties. A resulting degradation of cell characteristics occurred, including an increase in the leakage current and degradation of the memory window, featuring a reduction in the oxide/nitride/oxide trap density, which worsens as the magnitude of stress increases. From these results, we concluded that minimizing the stress is essential for retaining the cell characteristics. Especially, our results are expected to be of great help in determining the effect of external force on the memory characteristics during the back-end-of-line processing.</P>
Impact of etch angles on cell characteristics in 3D NAND flash memory
Oh, Young-Taek,Kim, Kyu-Beom,Shin, Sang-Hoon,Sim, Hahng,Van Toan, Nguyen,Ono, Takahito,Song, Yun-Heub Elsevier 2018 Microelectronics journal Vol.79 No.-
<P>We confirmed that critical dimensions should be well-controlled to minimize the etch angles, which provide significant on-current reduction and program characteristics distortion. These results led to an appropriated standard to implement high stack 3D NAND flash memory.</P>