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Resistive Switching in Graphene/Graphene Oxide/ZnO Heterostructures
O. O. Kapitanova,파닌,O. V. Kononenko,A. N. Baranov,강태원 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.10
Planar and vertical heterostructures based on graphene/graphene oxide/ZnO nanorods were investigatedusing optical and electrical characterizations. ZnO nanorods grown on graphene substrateby using the hydrothermal method were used for local oxidation of graphene and the formation ofself-assembled graphene/graphene oxide lateral and vertical heterostructures under an electric field. The graphene substrates were prepared by deposition of graphene oxide suspensions, followed bythermal reduction or the growth of graphene by using chemical vapor deposition. The verticalheterostructure demonstrated well-reproducible resistive switching for low offset voltage and couldbe used to fabricate high-density memory devices with low power consumption.
Resistive switching in graphene/graphene oxide/ZnO heterostructures
Kapitanova, O. O.,Panin, G. N.,Kononenko, O. V.,Baranov, A. N.,Kang, T. W. 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol. No.
Planar and vertical heterostructures based on graphene/graphene oxide/ZnO nanorods were investigated using optical and electrical characterizations. ZnO nanorods grown on graphene substrate by using the hydrothermal method were used for local oxidation of graphene and the formation of self-assembled graphene/graphene oxide lateral and vertical heterostructures under an electric field. The graphene substrates were prepared by deposition of graphene oxide suspensions, followed by thermal reduction or the growth of graphene by using chemical vapor deposition. The vertical heterostructure demonstrated well-reproducible resistive switching for low offset voltage and could be used to fabricate high-density memory devices with low power consumption.