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Spatially-resolved Study of the Luminescence from ZnO/MgO Core-shell Nanocrystal Structures
파닌,Andrey Baranov,Olesya Kapitanova,강태원 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.3
The luminescent properties of core-shell nanocrystal structures were investigated with high spatial resolution. The composites consisting of ZnO/MgO core/shell nanoheteroparticles showed an increase in the relative intensity of the green luminescence after annealing while a suppression of green luminescence from samples of ZnO tetrapods in a MgO nanoparticle matrix was observed. Combined spatially-resolved combined through-the-lens-detector (TLD) and cathodoluminescence (CL) measurements revealed that the depletion of electrons in the ZnO nanocrystals could lead to a suppression of the luminescence.
Contact Light-emitting Diodes Based on Vertical ZnO Nanorods
파닌,조학동,이상욱,강태원 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.10
We report vertical contact light-emitting diodes (VCLEDs), that are based on heterojunctionsformed by using the point contacts of n-ZnO nanorods (NRs) to the p-type semiconductor substrateand that are fabricated using a new approach to the formation of LEDs (Appl. Phys. Lett. 98,093110 (2011)). A p-type GaN film grown on a sapphire substrate was used to form n-ZnO NRs/p-GaN VCLEDs on a large area of about 4 cm2. The VCLEDs emitted a pure blue electroluminescencewith high efficiency. Electroluminescence at 470 nm, which is visible to the naked eye, started atsmall current of about 50 μA and is attributed to the good optical properties of the structurallyperfectheterojunctions in the point contacts. The VCLED configuration allows the creation ofZnO/p-GaN nano-LEDs of high density and high-quality with a greatly reduced concentration ofnonradiative defects in the active regions. The VCLEDs showed the high brightness of light requiredfor active matrix displays and general solid-state lighting.
Resistive Switching in Graphene/Graphene Oxide/ZnO Heterostructures
O. O. Kapitanova,파닌,O. V. Kononenko,A. N. Baranov,강태원 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.10
Planar and vertical heterostructures based on graphene/graphene oxide/ZnO nanorods were investigatedusing optical and electrical characterizations. ZnO nanorods grown on graphene substrateby using the hydrothermal method were used for local oxidation of graphene and the formation ofself-assembled graphene/graphene oxide lateral and vertical heterostructures under an electric field. The graphene substrates were prepared by deposition of graphene oxide suspensions, followed bythermal reduction or the growth of graphene by using chemical vapor deposition. The verticalheterostructure demonstrated well-reproducible resistive switching for low offset voltage and couldbe used to fabricate high-density memory devices with low power consumption.
Synthesis and Properties of Graphene Oxide/Graphene Nanostructures
O. O. Kapitanova,파닌,A. N. Baranov,강태원 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.10
We report preparation of graphene oxide (GO)/graphene (G) nanostructures and their structural, optical and electrical properties. GO was synthesized through oxidation of graphite by using the modified Hummer’s method, in which a long oxidation time was combined with a highly effective method for purifying the reaction products. The obtained GO was partially reduced (r-GO) by adding ascorbic acid and thermal annealing. An electrical reduction/oxidation process in r-GO under an electric field was used to form and control the GO/G nanostructures and the potential barrier at the interface. After the treatment, the ratio of the intensity of peak G (1578 cm−1) to that of peak D (1357 cm−1) in Raman spectra of the samples is increased, which is attributed to an increase in the ratio between the sp2 and sp3 regions. The electrical and the luminescence characteristics of the GO/G nanostructures were investigated.