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Simulation of multivariate non-Gaussian wind pressure on spherical latticed structures
Nyi Nyi Aung,Ye Jihong,F.J. Masters 한국풍공학회 2012 Wind and Structures, An International Journal (WAS Vol.15 No.3
Multivariate simulation is necessary for cases where non-Gaussian processes at spatially distributed locations are desired. A simulation algorithm to generate non-Gaussian wind pressure fields is proposed. Gaussian sample fields are generated based on the spectral representation method using wavelet transforms method and then mapped into non-Gaussian sample fields with the aid of a CDF mapping transformation technique. To illustrate the procedure, this approach is applied to experimental results obtained from wind tunnel tests on the domes. A multivariate Gaussian simulation technique is developed and then extended to multivariate non-Gaussian simulation using the CDF mapping technique. It is proposed to develop a new wavelet-based CDF mapping technique for simulation of multivariate non-Gaussian wind pressure process. The efficiency of the proposed methodology for the non-Gaussian nature of pressure fluctuations on separated flow regions of different rise-span ratios of domes is also discussed.
Electrical transport properties of GaSb: Te films grown by Molecular Beam Epitaxy
Aung Khaing Nyi,김시영(Si Young Kim),이웅(Woong Lee),오승준(Seungiun Oh),정미나(Mina Jung),박승환(Seunghwan Park),오동철(Dong-cheol Oh),이상태(Sang Tae Lee),조영래(Young Rae Cho),장지호(Ji Ho Chang),이홍찬(Hng Chan Lee) 한국마린엔지니어링학회 2008 한국마린엔지니어링학회 학술대회 논문집 Vol.2008 No.-
The electrical properties of GaSb films were investigated. Electrical properties were measured by Hall measurements with Van der Pauw configuration and performed in the temperature range from 10 to 300k. Te doped GaSb layers (wit/without ZnTe buffer) were grown by molecular beam epitaxy. The experimental results are compared to the theory, Brooks-Herring scattering theory, based on the two-layer Hall effect model. We considered the four major scattering mechanisms effects. The role of ZnTe buffer to the electrical properties is discussed.
분자선 에피탁시법으로 성장한 Te 도핑된 GaSb 박막의 전기적 특성
Aung Khaing Nyi,김시영(Si Young Kim),이웅(Woong Lee),오승준(Seungjun Oh),정미나(Mina Jung),박승환(Seunghwan Park),오동철(Dong-cheol Oh),이상태(Sang Tae Lee),조영래(Young Rae Cho),장지호(Ji Ho Chang),이홍찬(Hong Chan Lee) 한국항해항만학회 2008 한국항해항만학회 학술대회논문집 Vol.2008 No.공동학술
The electrical properties of GaSb films were investigated. Electrical properties were measured by Hal1 measurements with Van der Pauw configuration and performed in the temperature range from 10 to 300K. Te doped GaSb layers (with/without ZnTe buffer) were grown by molecular beam epitaxy. The experimental results are compared to the theory, Brooks-Herring scattering theory, based on the two-layer Hal1 effect model. We considered the four major scattering mechanisms effects. The role of ZnTe buffer to the electrical properties is discussed.