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Self-sustained n-Type Memory Transistor Devices Based on Natural Cellulose Paper Fibers
Martins, Rodrigo,Pereira, Luis,Barquinha, Pedro,Correia, Nuno,Goncalves, Goncalo,Ferreira, Isabel,Dias, Carlos,Correia, N.,Dionisio, M.,Silva, M.,Fortunato, Elvira The Korean Infomation Display Society 2009 Journal of information display Vol.10 No.4
Reported herein is the architecture for a nonvolatile n-type memory paper field-effect transistor. The device was built via the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in resin with ionic additives), which act simultaneously as substrate and gate dielectric, using passive and active semiconductors, respectively, as well as amorphous indium zinc and gallium indium zinc oxides for the gate electrode and channel layer, respectively. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.
Self-sustained n-Type Memory Transistor Devices Based on Natural Cellulose Paper Fibers
Rodrigo Martins,Luís Pereira,Pedro Barquinha,Nuno Correia,Gonçalo Gonçalves,Isabel Ferreira,Carlos Dias,Elvira Fortunato,N. Correia,M. Dionísio,M. Silva 한국정보디스플레이학회 2009 Journal of information display Vol.10 No.4
Reported herein is the architecture for a nonvolatile n-type memory paper field-effect transistor. The device was built via the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in resin withionic additives), which act simultaneously as substrate and gate dielectric, using passive and active semiconductors, respectively, as well as amorphous indium zinc and gallium indium zinc oxides for the gate electrode and channel layer, respectively. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.