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Determination of the Bending Rigidity of Graphene via Electrostatic Actuation of Buckled Membranes
Lindahl, Niklas,Midtvedt, Daniel,Svensson, Johannes,Nerushev, Oleg A.,Lindvall, Niclas,Isacsson, Andreas,Campbell, Eleanor E. B. American Chemical Society 2012 Nano letters Vol.12 No.7
<P>Classical continuum mechanics is used extensively to predict the properties of nanoscale materials such as graphene. The bending rigidity, κ, is an important parameter that is used, for example, to predict the performance of graphene nanoelectromechanical devices and also ripple formation. Despite its importance, there is a large spread in the theoretical predictions of κ for few-layer graphene. We have used the snap-through behavior of convex buckled graphene membranes under the application of electrostatic pressure to determine experimentally values of κ for double-layer graphene membranes. We demonstrate how to prepare convex-buckled suspended graphene ribbons and fully clamped suspended membranes and show how the determination of the curvature of the membranes and the critical snap-through voltage, using AFM, allows us to extract κ. The bending rigidity of bilayer graphene membranes under ambient conditions was determined to be 35.5<SUB>–15.0</SUB><SUP>+20.0</SUP> eV. Monolayers are shown to have significantly lower κ than bilayers.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2012/nalefd.2012.12.issue-7/nl301080v/production/images/medium/nl-2012-01080v_0001.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl301080v'>ACS Electronic Supporting Info</A></P>
Growth of aligned MWNT arrays using a micrometer scale local-heater at low ambient temperature.
Dittmer, S,Ek-Weis, J,Nerushev, O A,Campbell, E E B American Scientific Publishers 2010 Journal of Nanoscience and Nanotechnology Vol.10 No.6
<P>Ambient room temperature growth of aligned multi-walled carbon nanotube arrays on micrometer scale local heaters is demonstrated. High growth rates of up to 8.8 microm per second have been achieved and the growth has been monitored in situ using optical microscopy. The growth starts and ends abruptly over the length of the local heater. The terminal length of the nanotubes shows a clear dependence on growth temperature and small inhomogeneities in temperature across the heater are seen to lead to interesting microstructure of the arrays. The activation energy for growth was seen to be consistent with earlier reports for acetylene growth of nanotubes on iron catalysts.</P>
Selective growth of individual multiwalled carbon nanotubes
R.E. Morjan,M.S.Kabir,이상욱,O.A.Nerushev,P.Lundgren,S.Bengtsson,박영우,캠벨 한국물리학회 2004 Current Applied Physics Vol.4 No.6
Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the firrst time.
Selective growth of individual multiwalled carbon nanotubes
Morjan, R.E.,Kabir, M.S.,Lee, S.W.,Nerushev, O.A.,Lundgren, P.,Bengtsson, S.,Park, Y.W.,Campbell, E.E.B. Elsevier 2004 Current Applied Physics Vol.4 No.6
<P><B>Abstract</B></P><P>Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using dc plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time.</P>
Carbon nanotube field effect transistors with suspended graphene gates.
Svensson, Johannes,Lindahl, Niklas,Yun, Hoyeol,Seo, Miri,Midtvedt, Daniel,Tarakanov, Yury,Lindvall, Niclas,Nerushev, Oleg,Kinaret, Jari,Lee, Sangwook,Campbell, Eleanor E B American Chemical Society 2011 Nano letters Vol.11 No.9
<P>Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.</P>