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Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers
Bhuiyan, Mohammad Arif Sobhan,Reaz, Mamun Bin Ibne,Badal, Md. Torikul Islam,Mukit, Md. Abdul,Kamal, Noorfazila The Korean Institute of Electrical and Electronic 2016 Transactions on Electrical and Electronic Material Vol.17 No.5
A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm<sup>2</sup> that is the lowest-ever reported chip area for this frequency band was achieved.
Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers
Mohammad Arif Sobhan Bhuiyan,Mamun Bin Ibne Reaz,Md. Torikul Islam Badal,Md. Abdul Mukit,Noorfazila Kamal 한국전기전자재료학회 2016 Transactions on Electrical and Electronic Material Vol.17 No.5
A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paperproposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS)technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, anda 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dBinsertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in thereceive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from- 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-basedresonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for theswitch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm2that is the lowest-ever reported chip area for this frequency band was achieved.