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Shin, Mincheol 漢成大學校 1998 論文集 Vol.22 No.2
This paper provides rationale for the relative advantage of structural equation modeling(SEM) apporach to construct validation over conventional ways of getting evidence of construct validity. Drawing on Singh & Rhoads's three step validation approach, the construct validation process of a scale for psychological impact of short stature is illustrated to argue for the frequent use of structural equational modeling approach to construct validation.
NEGF Approach to Three-Dimensional Carbon Nanotube Field Effect Transistor Simulations
Mincheol Shin 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.4
We have performed device simulations on three-dimensional carbon nanotube field effect transistors by solving the Poisson equation self-consistently with the quantum transport equations formulated in the the non-equilibrium Green's function approach. The single-band tight binding Hamiltonian is used for the charge transport on the carbon nanotube surface and detailed numerical aspects for self-consistent calculations, including our simple method to calculate the surface Green's function at the contacts, are presented. Simulation results from our in-house simulator for Schottky-barrier devices, as well as doped source/drain devices, are also demonstrated. We have performed device simulations on three-dimensional carbon nanotube field effect transistors by solving the Poisson equation self-consistently with the quantum transport equations formulated in the the non-equilibrium Green's function approach. The single-band tight binding Hamiltonian is used for the charge transport on the carbon nanotube surface and detailed numerical aspects for self-consistent calculations, including our simple method to calculate the surface Green's function at the contacts, are presented. Simulation results from our in-house simulator for Schottky-barrier devices, as well as doped source/drain devices, are also demonstrated.