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- 저자 : Masrour R. (검색결과 5 건)
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Magnetic Properties of Antiferromagnetic Thin Films with spin S
R. Masrour,M. Hamedoun,E. K. Hlil,A. Benyoussef 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.7
The mean field theory (MFT) and high temperature series expansions (HTSEs) of the magneticsusceptibility are used to investigate the magnetic properties in simple cubic (sc) antiferromagneticwith spins S = 1 and S = 3/2 films by using both the Ising and the XY models. The films consistingof l = 2, 3, 4, 5, 6 and infinite (1) interacting layers are studied up to sixth order series in x = Jwhere = 1kBT , for free-surface boundary conditions. The effects of finite size on the critical-pointbehavior are studied by extrapolation of the high-temperature series. The N´eel temperature TN(l)as a function of the spin layers numbers l is obtained by using HTSEs of the magnetic susceptibilityseries, the Pad´e approximant method and the MFT theory. The critical exponentassociatedwith the magnetic susceptibility is deduced. The N´eel temperatures TN(l) for the l-layers films areestimated from the divergence of the staggered susceptibility with exponents(1) and(2) for theIsing and the XY models, respectively. This is consistent with the basic assumptions of scalinglaws. The shift exponents of the N´eel temperature for the Ising and the XY models, respectively,are estimated.
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M. Khalis,R. Masrour 한국전기전자재료학회 2019 Transactions on Electrical and Electronic Material Vol.20 No.5
We present a systematic procedure to obtain the main parameters that characterize a solar cell under conditions under illumination such as: resistors series and shunt short-circuit current, fi ll factor, saturation current, saturation current diff usion and recombination, using the least square method. We have clearly demonstrated that the current approximation to use a single exponential term with a factor of n diode to describe the behavior of the p–n junction appropriate but unable to diff erentiate between the diff usion saturation currents and recombination even using too sophisticated multimeters, and measures aretaken with care. To achieve this goal the experimental measurements of the characteristic I – V , we have used the two types of silicon solar cells: mono and polycrystalline, varying light concentration. The potential applications of both single and poly-crystals are governed by the electrical properties, such as the mobility and lifetime of the carriers, which are greatly infl uenced by the defects contained in the material. The results obtained show clearly that the structural defects of the grain boundaries associated with the segregated atoms promote the recombination of minority carriers. We employ also the intensity–voltage measurement to solar cells mono and polycrystalline under illumination to understand the recombination and diff usion currents behavior at the p–n junction.
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Imami M.,Masrour R. 한국세라믹학회 2024 한국세라믹학회지 Vol.61 No.1
Studies on the magnetic and electrical behavior of the perovskite complex EuMn0.5Fe0.5O3, which crystallizes in the orthorhombic structure and belongs to the symmetry group (Pbnm), have been conducted based on this study using numerical techniques More specifically, we investigated the magnetic and electrical properties of the EuMn0.5Fe0.5O3 material using approximations created within the framework of density functional theory, such as a full potential linearized augmented plane wave and the generalized gradient approximation. The magnetization, the transition temperature, as well as the fluctuation of the magnetic entropy, the specific heat, and the variation of the adiabatic temperature and relative cooling power. were analyzed using the Monte Carlo simulations when it was discovered via research that this compound exhibit spin-reorientation phenomena as it behaves like a conducting metal.
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Effect of Zn-doping CdTe on the internal and external quantum efficiency: ab initio calculations
Kadim G.,Masrour R. 한국세라믹학회 2023 한국세라믹학회지 Vol.60 No.6
The photovoltaic properties depend on the internal (IQE) and external (EQE) quantum efficiency. However, to calculate this quantum efficiency theoretically, we have determined the optical and electronic properties of Cd1−xZnxTe bulk and CdTe thin film. CdTe thin film is immensely interesting narrow band gap semiconductor with high absorption 100 × 104 cm−1 for the visible solar spectrum having promising applications in new-generation electronics and photo-electronic devices. Cd1−xZnxTe bulk is a semiconductor with a narrow bandgap value. The band gap values decrease slightly linearly from 1.708 to 1.642 eV with increase of Zn content. Optical reflectivity and absorption are discussed in detail. The IQE and EQE quantum efficiency of CdTe thin film and Zn doping CdTe bulk are investigated and analyzed. Our results are more consistent with the experimental results.
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Elkoua I. Ait,Masrour R. 한국세라믹학회 2024 한국세라믹학회지 Vol.61 No.2
In this paper, we use the functional density theory method with GGA and GGA + U approximations to study the structural, electronic, magnetic, thermal and thermoelectric properties of the complex quadruple perovskite CdCu3Fe4O12. The magnetic state between Cu and Fe is anti-ferromagnetic, and for Cu–Cu and Fe–Fe is ferromagnetic to have the most stable phase namely the ferrimagnetic phase. According to the energy study and the total moment to be evaluated is of the order of – 12 μB, where the ferrimagnetic phase of the quadruple perovskite CdCu3Fe4O12 is the most stable. This structure is characterized by semi-metallic behavior with a gap equal to 0.22 eV and medium polarization of spins according to the GGA approximation. The calculation of the total density of states reveals the existence of a mixed valence for Cu and Fe. The thermal and thermoelectrical properties at room temperature for the perovskite complex CdCu3Fe4O12 compound are: The Seebeck coefficient S = −5, 09 μV K−1, electrical conductivity 3.63 × 1020 Ω−1 cm−1 s−1, heat capacity 390 J mol−1 K−1, and the power factor 1010 W m−1 K−2 s−1
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