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Novel fabrication technologies of planar nano-gap electrodesfor single molecule evaluation
Ken Tsutsui,Masashi Nakata,Masayuki Morita,Masahide Tokuda,Kazuyuki Nagatsuma,Harumasa Onozato,Tadao Kaneko,Tomohiko Edura,Yoshio Mita,고이누마히데오미,Yasuo Wada 한국물리학회 2007 Current Applied Physics Vol.7 No.4
Present information technologies use semiconductor devices and magnetic/optical disc. However, they are all foreseen to face funda-mental limitations within a decade. Therefore, superseding devices are required for the next paradigm of high performance informationare expected as the most probable candidate to supersede the present semiconductor devices. The rst milestone towards the realizationof single molecule devices in future electronics requires quantitative evaluation of single molecule characteristics, which inevitably needsplanar nano-gap electrodes between which single molecules are sandwiched, observed their structures and measured their electrical char-acteristics. Nano-meter electrode pattern fabrication was achieved by electron beam lithography and metal lift-o, while planarizationprocessing technologies are described in this paper to realize nm-planar nano-scale electrodes.
Tomihiko Edura,Hiromasa Takahashi,Masashi Nakata,Ken Tsutsui,Kenji Itaka,고이누마히데오미,Jun Mizuno,Yasuo Wada 한국물리학회 2006 Current Applied Physics Vol.6 No.1
Organic thin lm transistors (O-TFTs) are attracting attentions recently for their possible application to exible eld eect tran-sistor (FET) devices and even for candidate devices in post-silicon information systems. However, the organic thin lms usuallygrow in a polycrystalline state, and the electrical properties are very dicult to set at an appropriate value because orientationand size of the polycrystalline grains are almost uncontrollable. Thus, it should be necessary to clarify the conduction characteristicsorganic thin lms. This paper reports on a nano-scale electrode array, which provides a method to characterize single organic semi-conductor grain, as well as to determine the single grain boundary eect on the electrical conduction. The fabrication method of thenano-scale electrode array and evaluation results are described. Single grain and single grain boundary in MBE grown pentacenethin lm were detected and were measured for the rst time using FET structures. The resistance of single grain was estimatedof the resistance of single grain pentacene thin lm and single pentacene grain boundary.