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Modification of the structural and electrical properties of graphene layers by Pt adsorbates
Iqbal, M Waqas,Iqbal, M Zahir,Khan, M Farooq,Jin, Xiaozhan,Hwang, Chanyong,Eom, Jonghwa TaylorFrancis 2014 SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS Vol.15 No.5
<P>The properties of graphene are strongly affected by metal adsorbates and clusters on graphene. Here, we study the effect of a thin layer of platinum (Pt) metal on exfoliated single, bi- and trilayer graphene and on chemical vapor deposition-grown single-layer graphene by using Raman spectroscopy and transport measurements. The Raman spectra and transport measurements show that Pt affects the structure as well as the electronic properties of graphene. The shift of peak frequencies, intensities and widths of the Raman bands were analyzed after the deposition of Pt with different thicknesses (1, 3, 5 nm) on the graphene. The shifts in the G and 2D peak positions of the Raman spectra indicate the n-type doping effect by the Pt metal. The doping effect was also confirmed by gate-voltage dependent resistivity measurements. The doping effect by the Pt metal is stable under ambient conditions, and the doping intensity increases with the increasing Pt deposition without inducing a severe degradation of the charge carrier mobility.</P>
Enhanced performance of graphene by using gold film for transfer and masking process
최진우,김혜지,박재현,M. Waqas Iqbal,M. Zahir Iqbal,엄종화,정종완 한국물리학회 2014 Current Applied Physics Vol.14 No.8
In this study, we tried to reduce the organic contamination of graphene. This organic contamination most likely occurs during the graphene transfer and lithography steps, which in turn degrades the quality of the graphene. Inorganic Au film was applied for Au-assisted transfer instead of the conventional thin poly(methyl methacrylate), and a new fabrication process using the Au-film for the transfer and masking layer was designed in order to minimize the contamination of graphene from organic residues. As a result, we demonstrated that the overall qualities of the transferred graphene film and graphene transistors have been highly improved. These improvements include an enhancement of mobility, and a decrease of defects, unintentional doping, contact resistance, and sheet resistance.