http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions
Oka, Keisuke,Yanagida, Takeshi,Nagashima, Kazuki,Kawai, Tomoji,Kim, Jin-Soo,Park, Bae Ho American Chemical Society 2010 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY - Vol.132 No.19
<P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jacsat/2010/jacsat.2010.132.issue-19/ja101742f/production/images/medium/ja-2010-01742f_0003.gif'> <P>We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.</P></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/ja101742f'>ACS Electronic Supporting Info</A></P>
Spatial Nonuniformity in Resistive-Switching Memory Effects of NiO
Oka, Keisuke,Yanagida, Takeshi,Nagashima, Kazuki,Kanai, Masaki,Kawai, Tomoji,Kim, Jin-Soo,Park, Bae Ho American Chemical Society 2011 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY - Vol.133 No.32
<P>Electrically driven resistance change phenomenon in metal/NiO/metal junctions, so-called resistive switching (RS), is a candidate for next-generation universal nonvolatile memories. However, the knowledge as to RS mechanisms is unfortunately far from comprehensive, especially the spatial switching location, which is crucial information to design reliable devices. In this communication, we demonstrate the identification of the spatial switching location of bipolar RS by introducing asymmetrically passivated planar NiO nanowire junctions. We have successfully identified that the bipolar RS in NiO occurs near the cathode rather than the anode. This trend can be interpreted in terms of an electrochemical redox model based on ion migration and p-type conduction.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jacsat/2011/jacsat.2011.133.issue-32/ja206063m/production/images/medium/ja-2011-06063m_0003.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/ja206063m'>ACS Electronic Supporting Info</A></P>
Shigenobu Emoto,Keisuke Hata,Hiroaki Nozawa,Kazushige Kawai,Toshiaki Tanaka,Takeshi Nishikawa,Yasutaka Shuno,Kazuhito Sasaki,Manabu Kaneko,Koji Murono,Yuuki Iida,Hiroaki Ishii,Yuichiro Yokoyama,Hiroyu 대한장연구학회 2022 Intestinal Research Vol.20 No.3
Background/Aims: Restorative proctocolectomy (RPC) with ileal pouch-anal anastomosis and handsewn anastomosis for ulcerative colitis requires pulling down of the ileal pouch into the pelvis, which can be technically challenging. We examined risk factors for the pouch not reaching the anus.Methods: Clinical records of 62 consecutive patients who were scheduled to undergo RPC with handsewn anastomosis at the University of Tokyo Hospital during 1989–2019 were reviewed. Risk factors for non-reaching were analyzed in patients in whom hand sewing was abandoned for stapled anastomosis because of nonreaching. Risk factors for non-reaching in laparoscopic RPC were separately analyzed. Anatomical indicators obtained from presurgical computed tomography (CT) were also evaluated.Results: Thirty-seven of 62 cases underwent laparoscopic procedures. In 6 cases (9.7%), handsewn anastomosis was changed to stapled anastomosis because of non-reaching. Male sex and a laparoscopic approach were independent risk factors of non-reaching. Distance between the terminal of the superior mesenteric artery (SMA) ileal branch and the anus > 11 cm was a risk factor for non-reaching.Conclusions: Laparoscopic RPC with handsewn anastomosis may limit extension and induction of the ileal pouch into the anus. Preoperative CT measurement from the terminal SMA to the anus may be useful for predicting non-reaching.
An ATM-Based Multicast Intersatellite Routing for LEO Satellite Networks
Umehara, Daisuke,Ebiko, Keisuke,Kobayashi, Toshihito,Kawai, Makoto,Morihiro, Yoshiteru 통신위성우주산업연구회 2000 Joint Conference on Satellite Communications Vol.2000 No.-
Low Earth Orbit (LEO) satellite communication systems with InterSatellite Links (ISLs) are promising as a world-wide multimedia core network infrastructure. As satellites come to higher latitudes in polar orbit constellation, the degradation of ISL transmission quality becomes large because of ISL interference and relative angular velocity between satellites in adjacent orbits. This paper deals with the transmission quality of ISLs based on the general transmission model. We propose an ATM-based multicast routing approach with link weight which overcomes the degradation of transmission quality and show that this approach enhances transmission quality significantly by computer simulation.
Nagashima, Kazuki,Yanagida, Takeshi,Oka, Keisuke,Kanai, Masaki,Klamchuen, Annop,Rahong, Sakon,Meng, Gang,Horprathum, Mati,Xu, Bo,Zhuge, Fuwei,He, Yong,Park, Bae Ho,Kawai, Tomoji American Chemical Society 2012 NANO LETTERS Vol.12 No.11
<P>This study demonstrates the effect of surroundings on a memristive switching at nanoscale by utilizing an open top planar-type device. NiO<SUB><I>x</I></SUB> and CoO<SUB><I>x</I></SUB> planar-type devices have exhibited a memristive behavior under atmospheric pressure, whereas TiO<SUB>2-<I>x</I></SUB> planar-type devices did not show a memristive switching even under the same surroundings. A memristive behavior of TiO<SUB>2-<I>x</I></SUB> planar-type devices has emerged when reducing an ambient pressure and/or employing a SiO<SUB>2</SUB> passivation layer. These results reveal that a thermodynamical interaction with surroundings critically determines the occurrence of memristive switching via varying a stability of nonstoichiometry. Since this effect tends to be more significant for smaller devices with larger specific surface area, tailoring the surrounding effect by an appropriate passivation will be essential for high density devices.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2012/nalefd.2012.12.issue-11/nl302880a/production/images/medium/nl-2012-02880a_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl302880a'>ACS Electronic Supporting Info</A></P>
Intrinsic Mechanisms of Memristive Switching
Nagashima, Kazuki,Yanagida, Takeshi,Oka, Keisuke,Kanai, Masaki,Klamchuen, Annop,Kim, Jin-Soo,Park, Bae Ho,Kawai, Tomoji American Chemical Society 2011 Nano letters Vol.11 No.5
<P>Resistive switching (RS) memory effect in metal-oxide-metal junctions is a fascinating phenomenon toward next-generation universal nonvolatile memories. However the lack of understanding the electrical nature of RS has held back the applications. Here we demonstrate the electrical nature of bipolar RS in cobalt oxides, such as the conduction mechanism and the switching location, by utilizing a planar single oxide nanowire device. Experiments utilizing field effect devices and multiprobe measurements have shown that the nanoscale RS in cobalt oxides originates from redox events near the cathode with p-type conduction paths, which is in contrast with the prevailing oxygen vacancy based model.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2011/nalefd.2011.11.issue-5/nl200707n/production/images/medium/nl-2011-00707n_0003.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl200707n'>ACS Electronic Supporting Info</A></P>
Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire
Nagashima, Kazuki,Yanagida, Takeshi,Oka, Keisuke,Taniguchi, Masateru,Kawai, Tomoji,Kim, Jin-Soo,Park, Bae Ho American Chemical Society 2010 NANO LETTERS Vol.10 No.4
<P>A multistate nonvolatile memory operated at sublithographic scale has been strongly desired since other nonvolatile memories have confronted the fundamental size limits owing to their working principles. Resistive switching (RS) in metal−oxide−metal junctions, so-called ReRAM, is promising for next generation high-density nonvolatile memory. Self-assembled oxide nanowire-based RS offers an attractive solution not only to reduce the device size beyond the limitation of current lithographic length scales but also to extract the underlying nanoscale RS mechanisms. Here we demonstrate the multistate bipolar RS of a single Co<SUB>3</SUB>O<SUB>4</SUB> nanowire (10 nm scale) with the endurance up to 10<SUP>8</SUP>. In addition, we succeeded to extract a voltage-induced nanoscale RS mechanism rather than current-induced RS. These findings would open up opportunities to explore not only for the intrinsic nanoscale RS mechanisms with the ultimate size limit but also for next generation multistate three-dimensional ReRAM.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2010/nalefd.2010.10.issue-4/nl9042906/production/images/medium/nl-2009-042906_0001.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl9042906'>ACS Electronic Supporting Info</A></P>