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Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design
JEON, Jongwook,SONG, Ickhyun,LEE, Jong Duk,PARK, Byung-Gook,SHIN, Hyungcheol The Institute of Electronics, Information and Comm 2009 IEICE transactions on electronics Vol.92 No.5
<P>In this paper, a compact channel thermal noise model for short-channel MOSFETs is presented and applied to the radio frequency integrated circuit (RFIC) design. Based on the analysis of the relationship among different short-channel effects such as velocity saturation effect (VSE), channel-length modulation (CLM), and carrier heating effect (CHE), the compact model for the channel thermal noise was analytically derived as a simple form. In order to simulate MOSFET's noise characteristics in circuit simulators, an appropriate methodology is proposed. The used compact noise model is verified by comparing simulated results to the measured data at device and circuit level by using 65nm and 130nm CMOS technologies, respectively.</P>
Investigation of the induced gate noise of nanoscale MOSFETs in the very high frequency region
Jeon, Jongwook,Kim, Yoon,Kang, Myounggon IOP 2016 Semiconductor science and technology Vol.31 No.6
<P>In this paper, we investigated the induced gate current noise of nanoscale N/PMOS devices. To analyze the induced gate noise, the induced gate current noise source model was analytically derived. By using the proposed model, the induced gate noise source was compared with other noise sources, and its impact on noise parameters was also analyzed in long-channel and nanoscale N/PMOS devices in the very high frequency region (>100 GHz). The results showed that the induced gate noise of sub-40 nm CMOS technology is negligible, even in the design of very high frequency circuits.</P>
The Meanings and Prospects of Primo Vascular System from the Viewpoint of Historical Context
Jeon, Jongwook,Lee, Sanghun Hindawi Publishing Corporation 2013 Evidence-based Complementary and Alternative Medic Vol.2013 No.-
<P>The aim of this overview is to evaluate the primo vascular system research in the context of the history of meridian theory and the modern meanings of it. The 12 meridian systems were naturally presupposed in the conventional study of the meridians and acupuncture. But the excavations of Mawang-tui old documents and Sichuan Mianyang wooden puppet revealed the primordial concepts of meridians uncolored by the numerological cosmology of Han era. Further, the meridian map of horse, cow and hawk show another resemblance to the primordial type of meridians. Modern meridian theory has been challenged by the material based scientific theory and the primo vascular theory presents the most radical answer for it. It aims to reveal the anatomical entity of meridians. However, the study of primo vascular system is unexpectedly opening the new horizon of scientific integration of East and West beyond the mere searching for anatomical entity of meridians. Conclusions we have drawn from the historical reviews are, (1) the surface structure of the body reflects the physiopathological changes of inside the body, (2) by stimulating specific sites on the surface, it is possible to acquire therapeutic effects of certain symptoms, and (3) numbers and locations of meridian acupoints are variable among traditional meridian theories. </P>
Investigation of Thermal Noise Factor in Nanoscale MOSFETs
Jongwook Jeon,Byung-Gook Park,Hyungcheol Shin 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.3
In this paper, we investigate the channel thermal noise in nanoscale MOSFETs. Simple analytical model of thermal noise factor in nanoscale MOSFETs is presented and it is verified with accurately measured noise data. The noise factor is expressed in terms of the channel conductance and the electric field in the gradual channel region. The proposed noise model can predict the channel thermal noise behavior in all operating bias regions from the long-channel to nanoscale MOSFETs. From the measurement results, we observed that the thermal noise model for the long-channel MOSFETs does not always underestimate the short-channel thermal noise.
Optical property of blended plasmonic nanofluid based on gold nanorods.
Jeon, Jongwook,Park, Sunho,Lee, Bong Jae Optical Society of America 2014 Optics express Vol.22 No.suppl4
<P>Present work experimentally characterizes the optical property of blended plasmonic nanofuids based on gold nanorod (AuNR) with different aspect ratios. The existence of localized surface plasmon resonance was verified from measured extinction coefficient of three AuNR solutions, and spectral tunability of AuNR nanofluid was successfully demonstrated in the visible and near-infrared spectral region. The representative aspect ratio and volume fraction of each sample were then calculated from the relation between extinction coefficient and extinction efficiency, which leads to the design of a blended plasmonic nanofluid having broad-band absorption characteristic in the visible and near-infrared spectral region. The results obtained from this study will facilitate the development of a novel volumetric solar thermal collectors using plasmonic nanofluids.</P>
Accurate Estimation Technique of Low-Frequency Noise in NAND Flash Cell Array
Jongwook Jeon,Ik-Joon Chang,Myounggon Kang IEEE 2016 IEEE electron device letters Vol.37 No.6
<P>We propose a technique to accurately estimate low-frequency noise (LFN) of a NAND flash cell. When we measure the LFN of a particular cell in NAND cell array, parasitic resistance and noise due to other cells have high potential to degrade the accuracy of this measurement. We derive small signal equivalent circuit of a NAND flash cell array and then, de-embed the effects of the above parasitic components. We perform this estimation in sub-20-nm NAND flash technology. The results clearly show the necessity of our proposed estimation technique.</P>
Investigation of Electrothermal Behaviors of 5-nm Bulk FinFET
Jeon, Jongwook,Jhon, Hee-Sauk,Kang, Myounggon Institute of Electrical and Electronics Engineers 2017 IEEE transactions on electron devices Vol.64 No.12
<P>The localized thermal effect caused by the self-heating effect (SE) becomes important for nanoscale 3-D transistors such as bulk FinFET because the thermal coupling from substrate is critical in such 3-D transistors. In this brief, we analyze the SE in 5-nm bulk FinFETs that are scaled down, following the International Technology Roadmap for Semiconductors. We systematically analyze the impact of key device parameters of bulk FinFET in view of the SE. Since the SE affects performance and reliability of transistors simultaneously, we define new figures of merit including ac delay and bias temperature instability for the first time, and it is found that the proper source/drain contact scheme design can achieve performance and reliability improvement at the same time in 5-nm bulk FinFET technology.</P>
Circuit Level Layout Optimization of MOS Transistor for RF and Noise Performance Improvements
Jeon, Jongwook,Kang, Myounggon IEEE 2016 IEEE transactions on electron devices Vol.63 No.12
<P>In this paper, circuit level analysis of the high frequency and low noise performance of an RF CMOS device with L-eff = 36 nm is performed using various layout schemes. By using the modeling methodology of interconnect metals and vias, it is found that the gate parasitic capacitance from the interconnects mainly affects the degradation of high frequency and noise performance. An optimized layout scheme is proposed to reduce the gate parasitic resistance and capacitance in this paper, and the proposed layout exhibits improved RF behaviors for f(T), f(MAX), and NFmin at 26 GHz up to similar to 13%, similar to 24%, and similar to 18% compared with the reference layout scheme, respectively.</P>