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Systematic and Rigorous Extraction Procedure for InP HBT π-type Small-signal Model Parameters
Jincan Zhang,Leiming Zhang,Min Liu,Liwen Zhang 대한전자공학회 2020 Journal of semiconductor technology and science Vol.20 No.4
In this paper, a systematic and rigorous extraction procedure for InP heterojunction bipolar transistor (HBT) π-type small-signal model parameters is proposed. The AC current crowding effect modeled as a parallel RC circuit is included in the small-signal model of InP HBTs. All of the elements parameters are acquired by means of a systematic and rigorous extraction method based on peeling algorithm, and there is no any simplified approximation. The extraction equations are derived from S-parameters by peeling peripheral elements from small-signal models to get reduced ones, so the extraction technique is more easily understood and clearer. The complete π-type model for an emitter-up InP HBT with 1×15 µm2 emitter area is established and validated, which shows that the small-signal equivalent circuit and elements values extraction method have very high accuracy.
A Watt-level Broadband Power Amplifier in GaAs HBT Process
Jincan Zhang,Bo Liu,Min Liu,Liwen Zhang,Jinchan Wang,Hao Jin 대한전자공학회 2019 Journal of semiconductor technology and science Vol.19 No.4
A fully integrated Watt-level broadband power amplifier for 6.0~7.1 GHz applications in a 2-μm GaAs HBT technology is presented in this paper. The power amplifier is implemented using paralleled sixteen transistors as main amplifier, to obtain high output power. In order to increase the bandwidth of the PA, two L-networks are adopted as the output matching network, and T-type matching network is used as input matching network. The broadband power amplifier has a small-signal gain of > 12 dB at 6.6 GHz, and saturation output power of 29.5~31.4 dBm (0.89~1.38 W) at 6.0~7.1 GHz with a maximum power added efficiency of 41.6% at 6.5 GHz. The power amplifier occupies 1.26 ㎟ (including pads).
A novel radiation-dependence model of InP HBTs including gamma radiation effects
Zhang Jincan,Cai Haiyi,Li Na,Zhang Liwen,Liu Min,Yang Shi 한국원자력학회 2023 Nuclear Engineering and Technology Vol.55 No.11
In order to predict the lifetime of InP Heterojunction Bipolar Transistor (HBT) devices and related circuits in the space radiation environment, a novel model including gamma radiation effects is proposed in this paper. Based on the analysis of radiation-induced device degradation effects including both DC and AC characteristics, a set of empirical expressions describing the device degradation trend are presented and incorporated into the Keysight model. To validate the effective of the proposed model, a series of radiation experiments are performed. The correctness of the novel model is validated by comparing experimental and simulated results before and after radiation.