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A novel radiation-dependence model of InP HBTs including gamma radiation effects
Zhang Jincan,Cai Haiyi,Li Na,Zhang Liwen,Liu Min,Yang Shi 한국원자력학회 2023 Nuclear Engineering and Technology Vol.55 No.11
In order to predict the lifetime of InP Heterojunction Bipolar Transistor (HBT) devices and related circuits in the space radiation environment, a novel model including gamma radiation effects is proposed in this paper. Based on the analysis of radiation-induced device degradation effects including both DC and AC characteristics, a set of empirical expressions describing the device degradation trend are presented and incorporated into the Keysight model. To validate the effective of the proposed model, a series of radiation experiments are performed. The correctness of the novel model is validated by comparing experimental and simulated results before and after radiation.