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ChangDong Chen,ChenNing Liu,JiWen Zheng,GongTan Li,Shan Li,QianWu,JinWu,Chuan Liu 한국정보디스플레이학회 2019 Journal of information display Vol.20 No.3
The mobility of pristine amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is insufficient to meet the requirement of the future ultra-high-definition displays. Reported herein is the fabrication of hydrogenated long-channel IGZO TFTs exhibiting a transconductance and an on/off ratio that are orders of magnitude superior to those of the regular devices. The gate bias stability of the treated IGZO TFTs was greatly enhanced, with the threshold voltage shifting by less than 1 V after 1 h stress. Experimentally, the hydrogenation of the active layer was achieved via the deposition of a SiNx/SiOx bilayer on top of the IGZO via plasma-enhanced chemical vapor deposition followed by post-annealing under optimized conditions. The elemental depth profiles indicated that this enhanced performance originated from the hydrogen doping of the IGZO film. Furthermore, a dual-gate structure was fabricated to alleviate the deterioration of the subthreshold properties induced by the excess hydrogen doping.
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Wanshu Li,Yan Zhang,Qinghong Zheng,Kai Xu,Xiuyun Zhang,Liming Liu,Bin Wei,Lihui Wang,Jiwen Xu,Xiaowen Zhang 한국물리학회 2018 Current Applied Physics Vol.18 No.5
Solution-processed tungsten oxide (s-WOx) interfacial layer for efficient hole injection in fluorescent blue organic light-emitting diode (OLED) is demonstrated. The OLED using 2-methyl-9,10-bis(naphthalen-2- yl)anthracene (MADN) as emitter shows luminous efficiency of 3.3 cd/A, power efficiency of 2.5 lm/W and external quantum efficiency of 4.6% with Commission Internationale d'Eclairage (CIE) color coordinates of (0.154, 0.102). Using MADN doped 1-4-di-[4-(N,N-diphenyl)amino]styryl-benzene as emitter, luminous efficiency of 10.8 cd/A, power efficiency of 6.4 lm/W and external quantum efficiency of 7.2% with CIE color coordinates of (0.167, 0.283) are achieved. Atomic force microscopy and X-ray photoelectron spectroscopy show that s-WOx features superior film morphology and non-stoichiometry with slight oxygen deficiency. Current-voltage characteristics and impedance spectroscopy analysis indicate that s-WOx behaves slightly enhanced hole injection and accordingly contributes to improved device performance in comparison with conventional vacuum thermal evaporation WOx. Our results pave an alternative way for broadeningWOx application with solution process and advancing fluorescent blue OLEDs.
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