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- 저자 : Jeoungin Lee (검색결과 2 건)
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Kwangsoo Lee,이준신,손혁주,Hyungjun Park,김재홍,Jeoungin Lee,김경해,Kyungsoo Jang,정성욱 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.6
Thin films of high dielectric constant materials, specifically titanium dioxide, were investigated as potential replacements for silicon dioxide, which is generally used as a blocking layer for nonvolatile memory devices. A silicon-oxynitride layer using nitrous-oxide plasma as a tunneling layer and using titanium-dioxide as a blocking layer was deposited to fabricate nonvolatile memory on rough poly-silicon. Titanium dioxide thin films were deposited using atmospheric pressure chemical vapor deposition and spectroscopic ellipsometry and scanning electron microscopy were used to measure the physical properties. A metal-insulator-semiconductor device was fabricated to measure the current density-electric field and a nonvolatile memory device on glass was fabricated to measure the gate voltage - drain current, drain voltage - drain current and retention characteristics. The leakage current density of the sample deposited at 250℃ was the lowest (1.4 x 10-9A/mm² at 2 MV/cm). The threshold voltage shift of the nonvolatile memory device on glass was 1.6 V and the subthreshold swing (~270 mV/decade based on the maximum slope in the transfer curve) and the on/off current ratio (~10 6) remained nearly constant during the programming/erasing operations.
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Sunghyun Hwang,이준신,Byong-Deog Choi,Ho-Kyoon Chung,Hyungjun Park,JeoungIn Lee,Ki-Young Lee,Kyung-soo Jang,S. K. Dhungel,Sungwook Jung 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.3
In this paper, we report our investigation on the effect of the presence of a high concentration of nitrogen in a silicon-oxide layer deposited by using plasma-assisted nitrous-oxide oxidation. The results of the ellipsometric measurement, the capacitance-voltage characterization studies, and the processing conditions are presented. P-type silicon wafers with 10 20 ohm·cm resistivities, 4-inch diameter; and (100) orientations were used for the fabrication of metal-insulator-semiconductor (MIS) capacitors. The silicon-oxynitride films deposited using by an inductively-coupled-plasma chemical-vapor deposition (ICPCVD) method under three different process conditions. In the first case, the RF power and the substrate temperature were kept constant while the deposition time was varied from 1 to 30 minutes. In the second case, the substrate temperature and the deposition time were kept constant while the RF power was varied from 50 to 450 W. In the thirds experiment, the RF power and deposition time were fixed while the substrate temperature was varied from 150 to 550 C. In all above processes, the nitrous-oxide flow and the working pressure were kept constant. The results of the present study indicate the suitability of the deposited films for applications in ultra very thin film transistors (UVTFT) and NVM (nonvolatile memory) devices.`t홲`t
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