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Growth of Nitrogen-Doped MgxZn1−xO for Use in Visible Rejection Photodetectors
A. Nakamura,T. Aoshima,T. Hayashi,S. Gangil,J. Temmyo,A. Navarro,J. Pereiro,E. Munoz 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Improvement in the Schottky behavior of metal (Au) contacts with Mg0.01Zn0.99O and Mg0.01Zn0.99O:N thin films were observed by treating the films with hydrogen peroxide (H2O2) (dipping of samples in H2O2 at 100 ℃ for 3 min). Contacts formed on untreated film showed Ohmic behavior in the current-voltage (I-V ) measurements. The H2O2 treatment led to a smooth surface morphology for the films and resulted in Schottky contact of Au fabricated on the treated films with barrier heights of 0.82 ∽ 0.85 eV. The absolute current density at a reverse bias of 3 V was 1 ∽ 6 × 10−6 A/cm2 for Au contacts on H2O2-treated films. The treated films showed lower electron concentration than the untreated films due to removal of the relatively high conducting top layers of the thin films. A metal-semiconductor-metal (MSM) detector was fabricated using a Mg0.05Zn0.95O:N film and was characterized for its spectral response.