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이재인(Jaein Lee),김민주(Minju Kim),김유림(Kim You Lim),이후정(Hoojeong Lee),김성희(Sung-Hee Kim),이경선(Kyung-Sun Lee) 대한인간공학회 2021 대한인간공학회 학술대회논문집 Vol.2021 No.11
Objective: 본 연구의 목적은 공공을 위한 정책들을 추진하는 과정에서 다양한 이해관계자들을 설득하고 결국에는 적용해나가는 과정의 사례들을 분석하여 향후 유사한 과정에 활용할 수 있도록 하는데 있다. Background: 공공의 이익을 위한 다양한 정책들의 추진은 필요한데 그 과정에서 다양한 이해관계자가 존재하고 그들의 각자의 관점에서 이해관계는 복잡하게 얽힐 수 밖에 없다. 그런 복잡한 이해관계를 극복하면서 정책을 추진하는 것은 공공의 이익을 위하여 상당히 중요한 과정이 될 수 있다. Method: 공공의 정책을 적용하는데 필요한 어떤 시스템이나 프로세스, 정책 같은 것을 볼 수 있는 사례들을 선정한다. 이후 정책화 과정을 조사한다. 그 정책이나 시스템이 적용되기 위해 필요한 일을 수행하는 과정에서 어떤 일이 있었는지, 제도화 과정, 전략, 방법들에 대하여 조사한다. Result: 다양한 사례 조사를 거쳐 10개 사례의 과정을 정리하였다. Conclusion & Application: 분석한 사례들은 향후 공공 정책을 적용하는 과정에서 이슈를 해결하는데 다양한 참고 자료가 될 것이다.
Shen, Haishan,Lee, Suhyeon,Kang, Jun-gu,Eom, Tae-Yil,Lee, Hoojeong,Kang, Chiwon,Han, Seungwoo Elsevier 2018 Journal of alloys and compounds Vol.767 No.-
<P><B>Abstract</B></P> <P>In this study, we investigated the effect of film thickness on the electrical and thermoelectric properties of bismuth-tellurium (Bi-Te) films. Bi-Te films of 1-, 4-, 10-, and 18-μm thicknesses were deposited via co-evaporation. Microstructural analyses using X-ray diffraction, scanning electron microscopy, and transmission electron microscopy indicated columnar film growth, with a highly porous structure that increased with the film thickness. The electron mobility of the films decreased significantly as the film thickness increased, which may be explained by the film porosity. Given a fairly constant Seebeck coefficient, the power factor decreased significantly with film thickness: 2.8 mW/mK<SUP>2</SUP> for the 1-μm-thick film and 1.5 mW/mK<SUP>2</SUP> for the 18-μm-thick Bi-Te film.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We investigate the effects of the film thickness of Bi-Te films the electrical and thermoelectric properties. </LI> <LI> We deposit Bi-Te films with 1-, 4-, 10-, 18-μm thicknesses via co-evaporation. </LI> <LI> The electron mobility decreases significantly with the thickness increasing. </LI> <LI> With the Seebeck coefficient not changing much, the power factor decreases substantially with the thickness. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Shen, Haishan,Lee, Suhyeon,Kang, Jun-gu,Eom, Tae-Yil,Lee, Hoojeong,Han, Seungwoo Elsevier 2018 APPLIED SURFACE SCIENCE - Vol.429 No.-
<P><B>Abstract</B></P> <P>P-type antimony telluride (Sb<SUB>2</SUB>Te<SUB>3</SUB>) films of various thicknesses (1-, 6-, 10-, and 16-μm) were deposited on an oxidized Si (100) substrate at 250°C by effusion cell co-evaporation. Microstructural analysis using X-ray diffraction, scanning electron microscopy, and transmission electron microscopy revealed that the grains of the films grew in a mode in which recrystallization was prevalent and grain growth subdued, in contrast to typical film growth, which is often characterized by grain growth. The resultant microstructure exhibited narrow columnar grains, the preferred orientation of which changed with film growth thickness from (1010) with the 1-μm films to (015) for the 6- and 10-μm films, and finally (110) for the 16-μm films. Carrier mobility and the overall thermoelectric properties of the Sb<SUB>2</SUB>Te<SUB>3</SUB> films were affected significantly by changes in the film microstructure; this was attributed to the strong anisotropy of Sb<SUB>2</SUB>Te<SUB>3</SUB> regarding electrical conductivity. The highest power factor of 3.3mW/mK<SUP>2</SUP> was observed for the 1-μm-thick Sb<SUB>2</SUB>Te<SUB>3</SUB> film.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Sb<SUB>2</SUB>Te<SUB>3</SUB> films of varying thicknesses were fabricated using co-evaporation. </LI> <LI> Changes in the growth texture of the films have a significant effect on the properties. </LI> <LI> The mobility decreased with increasing film thickness. </LI> <LI> The Seebeck coefficient decreased only slightly with increasing film thickness. </LI> <LI> The 1-μm-thick Sb<SUB>2</SUB>Te<SUB>3</SUB> film possess the largest power factor. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>Top and cross-sectional scanning electron microscopy images of 1-, 6-, 10-, and 16-μm-thick Sb2Te3 film samples, and schematic illustrations of micron-thick Sb2Te3 film growth: \(a) typical columnar growth and (b) growth of 16-μm thick film sample.</P> <P>[DISPLAY OMISSION]</P>
Effect of Thermoelectric Leg Thickness in a Planar Thin Film TEC Device on Different Substrates
Cheol Kim,Sangkug Park,Jeonglim Yoon,Hai-shan Shen,Min-Woo Jeong,Hoojeong Lee,Youngcheol Joo,Young-Chang Joo 대한금속·재료학회 2019 ELECTRONIC MATERIALS LETTERS Vol.15 No.6
Recently, mobile application processors (APs) have suffered from thermal issues such as local hot spot generation. Severalapproaches for chip cooling, such as dynamic thermal management, and heat pipe cooling, have been attempted so far, but,these solutions cannot completely eliminate increasing thermal issues. Therefore, in this study, we fabricated a planar typeof thin film thermoelectric cooler (TEC) as an active cooling device for a mobile AP chip. We studied the effect of thicknesson a planar thin film TEC device related to Joule heating and demonstrated the Peltier cooling effect on polyimide (PI) andSi substrates. The optimal thicknesses of n-type Bi2Te3and p-type Sb2Te3films were evaluated by ANSYS® simulation, andare 5.05 μm and 5.45 μm, respectively. It was shown that heat moves to the TE leg on the PI substrate, while the Si substrateserves as a heat sink according to the IR thermography analysis. The optimal thickness of the TE showed a temperature differencebetween the cold junction and hot junction up to 1.3 °C.