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Kosuke Kumagai,Tetsuo Fujita,Masashi Nakahira,Yoshiki Mizuguchi,Hideki Sonoda 전력전자학회 2015 ICPE(ISPE)논문집 Vol.2015 No.6
To reduce the environmental impact of the DC power system of the East Japan Railway Company (JREAST), it is important to have effective regenerative energy transfer from one train to another. In this paper, a simultaneous measurement between a Yamanote Line Series E231 train and the adjacent substations was conducted. From these measurements, the correlation between squeezing control of regenerative power in the train and behavior of the substations was confirmed. Also, to consider minimizing the total squeezing control of regenerative power we studied the total of squeezing control of regenerative power from the data at the substations.
A Series Voltage Sag Compensation Scheme with Open-Circuit Protection
Sumate Naetiladdanon,Toshifumi Ise,Hideki Fujita 전력전자학회 2004 ICPE(ISPE)논문집 Vol.- No.-
In this paper, a series voltage sag compensation scheme with open-circuit protection is presented. The voltage sags and momentary interruptions during the fault occurred can be mitigated. For open-circuit protection, the faulted incoming line is disconnected and the new current path is made. The control scheme is proposed for voltage sag compensation and interruption compensation. Simulations of voltage sag compensation with open-circuit protection demonstrated the validation of the proposed circuit and control sequence of switches.
ALUMINUM BIAS SPUTTERING FOR FILM COVERAGE IMPROVEMENT
Kobayashi.Shigeru,Shimamura, Hideaki,Sakata, Masao,Fujita, Shouyou,Yajima, Akira,Saito, Hiroshi,Tateishi, Hideki,Sasaki, Shinji 대한전자공학회 1989 ICVC : International Conference on VLSI and CAD Vol.1 No.1
A filter was installed between the sputtering target and the substrate so as to reduce the aluminum deposition arriving with a shallow angle at the substrate in order to study the step coverage improvement by the bias application. It is deduced that the aluminum flowage occurs so that the surface energy is minimized around the via hole. Aluminum films deposited with the pulsed biasing were characterized in which the possible microstructual damage by argon bombardment is to be minimized. This biasing technique should provide with a better process for the step coverage improvement. A sputtering cathode was developed for aluminum bias sputtering which has a substrate current capability as high as 2A for a 5 inch wafer at the substrate voltage around-50V.