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Characteristics of junctionless charge trap flash memory for 3D stacked NAND flash.
Oh, Jinho,Na, Heedo,Park, Sunghoon,Sohn, Hyunchul American Scientific Publishers 2013 Journal of Nanoscience and Nanotechnology Vol.13 No.9
<P>The electrical characteristics of tunnel barrier engineered-charge trap flash (TBE-CTF) memory devices with junctionless (JL) source and drain (S/D) were investigated. The JL structure is composed of an n(+)-poly-Si based ultra-thin channel and S/D with identical doping concentrations. The band engineered Hf-silicate/Al2O3 tunnel barrier stack was applied to a JL-TBE-CTF memory device in order to enhance the field sensitivity. The Hf-silicate/Al2O3 tunnel barrier, HfO2 trap layer, and Al2O3 blocking layer were deposited by atomic layer deposition. The fabricated device exhibited a large memory window of 9.43 V, as well as high programming and erasing speeds. Moreover, it also showed adequate retention times and endurance properties. Hence, the JL-TBE-CTF memory (which has a low process complexity) is expected to be an appropriate structure for 3D stacked ultra-high density memory applications.</P>
High-mobility Property of Crystallized In-Te Chalcogenide Materials
Sung Jin Park,Seung-Jong Park,Dambi Park,Min An,조만호,Jonggi Kim,Heedo Na,Sung hoon Park,손현철 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.2
In-Te films were deposited by ion beam sputtering deposition (IBSD) using In and Te targets. The crystallization characteristics of the resulting films were investigated by 4-point Rs measurement, x-ray diffraction (XRD),transmission electron microscopy (TEM), and the Hall-effect measurement system. As the amount of In was increased in In-Te, the crystallization temperature increased. X-ray data for the crystalline structure show that phase separation to In2Te3 and InTe occurred in InTe and In3Te2 samples after annealing at 350°C. The value of carrier mobility and concentration decreased in order of In2Te3, In3Te2, and InTe. The decreasing value is caused by phase separation and is the unique property of chemical composition.