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Y.W.Heo,J.Kelly,D.P.Norton,A.F.Hebard,S.J.Pearton,J.M.Zavada,Y.D.Park 대한전자공학회 2004 Journal of semiconductor technology and science Vol.4 No.4
High dose (3×lO^(16)cm^(-2)) implantation of Fe or Ni ions into bulk, single-crystal ZnO substrates was carried out at substrate temperature of ~350℃ to avoid amorphization of the implanted region. The samples were subsequently annealed at 700℃ to repair some of the residual implant damage. X-Ray Diffraction did not show any evidence of secondary phase formation in the ZnO. The Ni implanted samples remained paramagnetic but the Fe-implanted ZnO showed evidence of ferromagnetism with an approximate Curie temperature of ~240K.Preliminary X-Ray Photoelectron Spectroscopy measurements showed the Fe to be in the 2+ oxidation state. The carrier density in the implanted region still appears to be too low to support carrier-meditated origin of the ferromagnetism and formation of bound magnetic polarons may be one potential explanation for the observed magnetic properties. No evidence of the Anomalous Hall Effect could be found in the Fe-implanted ZnO, but its transport properties were dominated by the conventional or ordinary Hall effect.
Heo, Y.W.,Kelly, J.,Norton, D.P.,Hebard, A.F.,Pearton, S.J.,Zavada, J.M.,Park, Y.D. The Institute of Electronics and Information Engin 2004 Journal of semiconductor technology and science Vol.4 No.4
High dose ($3{\times}10^{16}cm^{-2}$) implantation of Fe or Ni ions into bulk, single-crystal ZnO substrates was carried out at substrate temperature of ${\sim}350^{\circ}C$ to avoid amorphization of the implanted region. The samples were subsequently annealed at $700^{\circ}C$ to repair some of the residual implant damage. X-Ray Diffraction did not show any evidence of secondary phase formation in the ZnO. The Ni implanted samples remained paramagnetic but the Fe-implanted ZnO showed evidence of ferromagnetism with an approximate Curie temperature of ${\sim}$240K. Preliminary X-Ray Photoelectron Spectroscopy measurements showed the Fe to be ill the 2+ oxidation state. The earrler density in the implanted region still appears to be too low to support carrier-meditated origin of the ferromagnetism and formation of bound magnetic polarons may be one potential explanation for the observed magnetic properties, No evidence of the Anomalous Hall Effect could be found in the Fe-implanted ZnO, but its transport properties were dominated by the conventional or ordinary Hall effect.
Mickel, Patrick R.,Jeen, Hyoungjeen,Kumar, Pradeep,Biswas, Amlan,Hebard, Arthur F. American Physical Society 2016 Physical Review B Vol.93 No.13
<P>We report a giant linear magnetoelectric coupling in strained BiMnO3 thin films in which the disorder associated with an islanded morphology gives rise to extrinsic relaxor ferroelectricity that is not present in bulk centrosymmetric ferromagnetic crystalline BiMnO3. Strain associated with the disorder is treated as a local variable, which couples to the two ferroic order parameters, magnetization (M) over right arrow and polarization (P) over right arrow. A straightforward 'gas under a piston' thermodynamic treatment explains the observed correlated temperature dependencies of the product of susceptibilities and the magnetoelectric coefficient together with the enhancement of the coupling by the proximity of the ferroic transition temperatures close to the relaxor freezing temperature. Our interpretation is based on a trilinear coupling term in the free energy of the form (L) over right arrow . ((P) over right arrow x (M) over right arrow), where (L) over right arrow is a hidden antiferromagnetic order parameter, previously postulated by theory for BiMnO3. This phenomenological invariant not only preserves inversion and time-reversal symmetry of the strain-induced interactions but also explains the pronounced linear magnetoelectric coupling without using the more conventional higher order biquadratic interaction proportional to ((P) over right arrow . (M) over right arrow)(2).</P>