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Reza Jalali,Mojtaba Parhizkar,Hasan Bidadi,Hamid Naghshara,Seyd Reza Hosseini,Majid Jafari 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.6
TiAlN thin films were deposited by using the reactive magnetron co-sputtering method whitindividual Ti and Al targets, where the Ti and the Al targets were simultaneously powered by usingDC and RF sources, respectively. the electrical resistivity and the structural and microstructuralproperties of the deposited TiAlN thin films and the effects of Al content, substrate temperatureand nitrogen gas flow rate on those properties were investigated. At a low flow rate of nitrogen gas(0.51 sccm), the electrical resistivity of the films was found to increase with increasing AC power,but at a high flow rate of nitrogen gas, it was found to decrease. The structural and microstructuralanalyses performed by using X-ray diffraction and scanning electron microscopy (SEM) showed thatwith increasing substrate temperature from room temperature to 400◦C, the films prepared at 400◦C have a crystalline structure while those prepared at room temperature had an amorphous nature. Also, the SEM analysis revealed that with decreasing AC power and increasing nitrogen flow rate,the size of the grains in the prepared films become larger.
Sanam SaeidNahaie,Samad Roshan Entezar,Hamid Naghshara,Hyun Jun Jo,Jong Su Kim,김영호,이상준 한국물리학회 2020 Current Applied Physics Vol.20 No.1
The incident light intensity (Iex) effects on a GaAs single junction solar cell (SC) was investigated using bright electroreflectance spectroscopy (BER) and current-voltage (J-V) measurements at room temperature. The p-n junction electric field (Fpn) of the SC was evaluated by analyzing the Franz Keyldesh oscillation (FKO) in the BER spectra. The Iex effect on Fpn was investigated at various incident light intensities from 0.03 to 25 suns. The Fpn decreased gradually with increasing Iex due to the photovoltaic effect. For the forward bias voltage, some part of the electrons and holes drifted to the p and n sides, respectively, and produced the induced electric field in the same direction of the Fpn. Therefore, the Fpn increased up to 2.5 suns. At more than 2.5 suns, most of the electrons and holes moved to the n and p sides and decreased the Fpn due to the photovoltaic effect. In addition, the Fpn was examined under light illumination as a function of different DC bias voltages (−0.2–0.4 V). The Fpn decreased with increasing bias voltage due to the decrease in potential barrier. The Fpn increased with increasing bias voltage due to the decrease in the photogenerated carrier-induced electric field for high Iex.