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Atomic Layer Epitaxy of Nitrogen-Doped ZnSe
TAKEMURA, YASUSHI,KONAGAI, MAKOTO,YAMASAKI, KANAME,LEE, C.H.,TAKAHASHI, KIYOSHI 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-
Atomic layer epitaxy of nitrogen-doped ZnSe was studied. The ZnSe films were grown on GaAs(001) substrates at 250℃ with a continuous flow of nitrogen and alternate supplies of zinc and selenium. The grown films were characterized by photoluminescence spectra at 4.2K, and it was found that nitrogen was incorporated as a shallow acceptor in the films. The Schottky diodes were prepared by evaporation gold on the nitrogen-doped films grown on p-type GaAs substrates. A rectifying characteristic that was consistent with the structure, assuming p-type conductivity of ZnSe, was observed. Catacitance-voltage measurement of the structure also indicated p-type conductivity of the films.