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Cho, Gyoujin,Glatzhofer, Daniel T 한국공업화학회 1997 Journal of Industrial and Engineering Chemistry Vol.3 No.1
Anionic polymeric and copolymeric surfactants were prepared respectively from 10- undecen-1-yl sulfate micelle and 10-undecenol as a polymerizable additive. The resulting polymeric and copolymeric surfactants were characterized using ¹H-NMR and a surface tensiometer. It has been confirmed that the copolymeric surfactant has 3 sulfate to 1 alcohol group repeat unit and that both polymeric and copolymeric surfactants can form micelles without critical micellar concentration (CMC). The solubilization of m-chlorophenol in aqueous solutions of the anionic polymeric and copolymeric surfactants at 25℃ has been studied using semiequilibrium dialysis. Complete solubilization isotherms have been determined for m-chlorophenol in the polymeric and copolymeric micelles below the CMC of 10-undecen-1-yl sulfate. The solubilization equilibrium (or partition) constant for the copolymeric micelle was slightly higher than that of the polymeric micelle. As usual, the solubilization equilibrium constant decreased with increasing mole fraction of m-chlorophenol in the micelles. Those results have been discussed based on a surface binding view point.
Electrical Characteristics of GaAs Nanowire-Based MESFETs on Flexible Plastics
Changjoon Yoon,Gyoujin Cho,Sangsig Kim IEEE 2011 IEEE transactions on electron devices Vol.58 No.4
<P>GaAs nanowire (NW)-based metal-semiconductor field-effect transistors (MESFETs) were constructed on flexible plastic substrates by a conventional top-down approach. The top-down approach utilized in this paper combines photolithography of high-quality GaAs bulk wafers with anisotropic chemical etching processes for preparation of GaAs NWs and photolithographic processes for formation of metal electrodes. For a representative GaAs NW-based MESFET, peak transconductance, the I<SUB>on</SUB>/I<SUB>off</SUB> ratio, and the subthreshold slope are estimated to be approximately 19.7 S, ~10<SUP>7</SUP>, and ~100 mV/dec, respectively. The electrical characteristics of the GaAs NW-based MESFETs were maintained during 3000 times of bending cycles under maximal tensile strains of 0.77% and 1.02%. These results demonstrate the possibility of using these devices in high-speed and high-performance flexible electronics.</P>
Lee, Nam-Suk,Cho, Gyoujin,Shin, Hoon-Kyu,Noh, Jaegeun American Scientific Publishers 2016 Journal of nanoscience and nanotechnology Vol.16 No.6
<P>To understand the structural stability of as-prepared octanethiol (OT) self-assembled monolayers (SAMs) with a fully covered c(4x2) phase on Au(111) in ultrahigh vacuum (UHV) conditions of 3x10(-7) Pa at room temperature, we examined OT SAM samples obtained as a function of storage period using scanning tunneling microscopy (STM). STM imaging revealed that phase transition of OT SAMs after storage in UHV for 3 days occurs from the c(4x2) phase to the mixed phase containing ordered c(4x2) and disordered phases. It was also observed that the disordered phase was mainly located at around vacancy islands and near step edges of Au(111) terraces, implying that desorption of OT molecules chemisorbed on Au(111) in UHV occurs more quickly in these regions compared with in the closely packed and ordered domains. After a longer storage in UHV for 6 days, OT SAMs with the c(4x2) phase were changed to the disordered phase containing a partially ordered domain with a row structure. From this study, we clearly demonstrated that OT molecules in SAMs on Au(111) are desorbed spontaneously in UHV at room temperature, resulting in the formation of disordered and row phases.</P>
Adhikari, Kishor Kumar,Jung, Younsu,Park, Hyejin,Cho, Gyoujin,Kim, Nam-Young Hindawi Limited 2015 Journal of nanomaterials Vol.2015 No.-
<P>This paper presents a silver-nanoparticle-based, screen-printed, high-performance, dual-band, bandstop filter (DBBSF) on a flexible polyethylene terephthalate (PET) substrate. Using screen-printing techniques to process a highly viscous silver printing ink, high-conductivity printed lines were implemented at a web transfer speed of 5 m/min. Characterized by X-ray diffraction (XRD), optical microscopy, atomic force microscopy (AFM), and scanning electron microscopy (SEM), the printed lines were shown to be characterized by smooth surfaces with a root mean square roughness of 7.986 nm; a significantly higher thickness (12.2 <I>μ</I>m) than the skin depth; and a high conductivity of2×<SUP>107</SUP> S/m. These excellent printed line characteristics enabled the implementation of a high-selectivity DBBSF using shunt-connected uniform impedance resonators (UIRs). Additionally, the inductive loading effect of T-shaped stubs on the UIRs, which were analyzed using S-parameters based on lumped parameter calculations, was used to improve the return losses of the geometrically optimized DBBSF. The measured minimum return loss and maximum insertion loss of 28.26 and 1.58 dB, respectively, at the central frequencies of 2.56 and 5.29 GHz of a protocol screen-printed DBBSF demonstrated the excellent performance of the material and its significant potential for use in future cost-effective, flexible WiMax and WLAN applications.</P>