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RISS 인기검색어
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- 저자 : Ghasemi Azadani, Javad (검색결과 1 건)
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Ma, Rui,Zhang, Huairuo,Yoo, Youngdong,Degregorio, Zachary Patrick,Jin, Lun,Golani, Prafful,Ghasemi Azadani, Javad,Low, Tony,Johns, James E.,Bendersky, Leonid A.,Davydov, Albert V.,Koester, Steven J. American Chemical Society 2019 ACS NANO Vol.13 No.7
<P>The coexistence of metallic and semiconducting polymorphs in transition-metal dichalcogenides (TMDCs) can be utilized to solve the large contact resistance issue in TMDC-based field effect transistors (FETs). A semiconducting hexagonal (2H) molybdenum ditelluride (MoTe<SUB>2</SUB>) phase, metallic monoclinic (1T′) MoTe<SUB>2</SUB> phase, and their lateral homojunctions can be selectively synthesized <I><I>in situ</I></I> by chemical vapor deposition due to the small free energy difference between the two phases. Here, we have investigated, in detail, the structural and electrical properties of <I>in situ</I>-grown lateral 2H/1T′ MoTe<SUB>2</SUB> homojunctions grown using flux-controlled phase engineering. Using atomic-resolution plan-view and cross-sectional transmission electron microscopy analyses, we show that the round regions of near-single-crystalline 2H-MoTe<SUB>2</SUB> grow out of a polycrystalline 1T′-MoTe<SUB>2</SUB> matrix. We further demonstrate the operation of MoTe<SUB>2</SUB> FETs made on these <I>in situ</I>-grown lateral homojunctions with 1T′ contacts. The use of a 1T′ phase as electrodes in MoTe<SUB>2</SUB> FETs effectively improves the device performance by substantially decreasing the contact resistance. The contact resistance of 1T′ electrodes extracted from transfer length method measurements is 470 ± 30 Ω·μm. Temperature- and gate-voltage-dependent transport characteristics reveal a flat-band barrier height of ∼30 ± 10 meV at the lateral 2H/1T′ interface that is several times smaller and shows a stronger gate modulation, compared to the metal/2H Schottky barrier height. The information learned from this analysis will be critical to understanding the properties of MoTe<SUB>2</SUB> homojunction FETs for use in memory and logic circuity applications.</P> [FIG OMISSION]</BR>
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