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George Belev,Safa Kasap,J.A. Rowlands,David Hunter,Martin Yaffe 한국물리학회 2008 Current Applied Physics Vol.8 No.3,4
Stabilized a-Se lms deposited at suciently low substrate temperatures aren-like in which electrons can drift but holes are deeplytrapped. Such layers can be conveniently incorporated in a multilayer a-Se detector structure to block the injection of holes from thepositive electrode. We have shown that a simple double-layer detector structure based on a cold depositedn-layer (which is thenannealed) on which an i-like layer is grown can have dark current densities lower than 10. 10 Acm. 2 at a eld of 10 V/l m. The darkcurrent depends on the thickness of then-like layer. An a-Se X-ray detector for slot scanning was fabricated by having thein a-Se photo-conductor structure coated onto a CCD chip. The latter detector was shown to have excellent resolution with a modulation transfer func-tion remaining above 0.5 up to a spatial frequency of 11-14 lp mm-¹