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Atomic Layer Deposition for Thin Film Solid-State Battery and Capacitor
Dohyun Go,Jeong Woo Shin,Seunghyeon Lee,Jaehyeong Lee,Byung Chan Yang,Yoonjin Won,Munekazu Motoyama,Jihwan An 한국정밀공학회 2023 International Journal of Precision Engineering and Vol.10 No.3
The demand for electrical power management has increased in recent years, owing partly to increasing contribution of intermittent renewable energy resources to the overall electricity generation. Electrical energy storage systems, such as batteries and capacitors, are core technologies for effective power management. Recent significant technological developments for these energy storage devices include the use of thin film components, which result in increased capacity and reliability. Specifically, thin films with high integrity and uniformity are required in the electrolytes of solid-state Li batteries (SSLBs) and the dielectrics of electrostatic capacitors (ECs), even at extremely thin length scale (< 100 nm) and on complex nanostructures. In this regard, atomic layer deposition (ALD), which can deposit uniform and dense thin films over 3-dimensional (3D) structures, has demonstrated its efficiency in increasing device performance, particularly when applied to the electrolytes and dielectrics of SSLBs and ECs. As a result, the applications of ALD techniques to SSLB electrolytes and EC dielectrics will be examined in this study, with a particular emphasis on research instances that used high aspect ratio structures with conformal ALD coating. Finally, we will discuss how recent advances in innovative ALD processes and equipment with better controllability, versatility, throughput, and economy may further contribute to the development of SSLBs and ECs, especially at scaled-up level.
Yang, Byung Chan,Go, Dohyun,Oh, Seongkook,Woo Shin, Jeong,Kim, Hyong June,An, Jihwan Elsevier 2019 APPLIED SURFACE SCIENCE - Vol.473 No.-
<P><B>Abstract</B></P> <P>Ultra-thin ZrO<SUB>2</SUB>-doped CeO<SUB>2</SUB> (ZDC) interlayers (20 nm thick) with varying doping ratios of 0, 20, and 60 mol% were prepared using atomic layer deposition (ALD), and were investigated as cathodic interlayers for low-temperature solid oxide fuel cells (LT-SOFCs). The inclusion of ZrO<SUB>2</SUB> in CeO<SUB>2</SUB> film induced the reduction of Ce<SUP>4+</SUP> to Ce<SUP>3+</SUP> with higher concentration of oxygen vacancies, and also enhanced the resistance of the film to the coarsening at elevated temperature (800 °C), well preserving the nanoscale fine grain structure. As a result, the maximum power density of the cell with 20 mol%-doped ZDC interlayer improved by 57% compared to the cell without the interlayer due to enhanced activation process at the cathode, which seems to be due to higher oxygen vacancy population as well as higher grain boundary density at the electrolyte-cathode interface.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Doping level in ZrO<SUB>2</SUB>-doped CeO<SUB>2</SUB> was precisely controlled by atomic layer deposition. </LI> <LI> ZrO<SUB>2</SUB> doping reduces Ce<SUP>4+</SUP> to Ce<SUP>3+</SUP> increasing oxygen vacancy content in CeO<SUB>2</SUB> lattice. </LI> <LI> ZrO<SUB>2</SUB> doping suppresses the grain growth leading to smaller grains upon annealing. </LI> <LI> The cell performance with ZrO<SUB>2</SUB>-doped CeO<SUB>2</SUB> cathodic interlayer improves by 57%. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Jeong Woo Shin,Sungje Lee,Dohyun Go,Byung Chan Yang,Taeyoung Kim,Sung Eun Jo,Pei-Chen Su,Jihwan An 한국정밀공학회 2023 International Journal of Precision Engineering and Vol.10 No.3
Designing highly active and thermally stable electrodes is crucial for realizing low-temperature solid oxide fuel cells (LT-SOFCs) with excellent performance. In this study, we fabricated an yttria-doped ceria (YDC) shell layer by atomic layer deposition (ALD) over a Pt cathode by controlling the doping concentration of yttria in YDC film. The exchange current density was enhanced by a factor of five when the ALD YDC shell layer was deposited onto the cathode surface compared to the bare Pt cathode, resulting in an 80% decrease in the activation resistance of the 19 mol%-doped ALD YDC-overcoated Pt cathode compared to that of the bare Pt cathode. Furthermore, the thermal stability was enhanced in low-to-medium-doped (7–19 mol%) ALD YDC-coated Pt cathodes, whereas the highly doped (31 mol%) cathode showed a relatively marginal improvement in stability.