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      • KCI등재

        Effect of Substrate Temperature on the Structural, Optical, and Electrical Properties of Silver-indium-selenide Films Prepared by Using Laser Ablation

        Dinesh Pathak,R. K. Bedi,Davinder Kaur 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.3

        KrF pulse UV excimer laser ablation of films of AgInSe2 (AIS) onto the glass substrates kept at different temperature using a ultra-high-vacuum deposition system has been studied. The AIS target was synthesized from high-purity materials. The compositional stoichiometry was observed to be largely maintained in the films. This suggests that Pulse Laser Deposition can be used as technique for fabrication of ternary semi conducting films. The X-ray diffraction studies of the films show that the films are textured in the (112) direction. The c/a ratio of 1.93, which is indicative of distortion, confirms its tetragonally-distorted chalcopyrite structure. The structural, optical and electrical properties have been investigated as functions of the substrate temperature. An increase in substrate temperature results in a more ordered structure. Field emission scanning electron microscopy (FESEM) observations show more compactness and densely packed arrangements with increasing substrate temperature. The roughness of the film is found to increase at higher deposition temperatures. The optical studies of the films show that the optical band gap lies in the range 1.20- 1.27 eV. The activation energy is in the range 0.0103 - 0.0556 eV.

      • KCI등재

        Fabrication of Densely Distributed Silver Indium Selenide Nanorods by Using Ag+ Ion Irradiation

        Dinesh Pathak,R. K. Bedi,Davinder Kaur,Ravi Kumar 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.57 No.3

        We prepared polycrystalline silver indium selenide thin films by vacuum evaporation on Si (100) substrates at a high temperature using a stochiometric powder. The films were characterized by X-ray diffraction (XRD) and UV-VIS-NIR spectroscopy. For the fabrication of densely distributed one-dimensional nanostructures of silver indium selenide on Si substrates, thermally evaporated films of AIS on Si (100) substrates were irradiated by incident 200-MeV Ag+ ions at a fluence of 5 × 1011 ion/cm2. At elevated substrate temperatures, silver indium selenide (AIS) exhibited a nanorod -like structure. The optical and the structural properties of the irradiated films were studied using UV-VIS-NIR Reflection spectroscopy, atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), and XRD. The controlled fabrication of such densely distributed onedimensional nanorods on a Si substrate by using the ion beam technique, we believe, will open a variety of applications, such as nanoelectronics and optoelectronics devices.

      • KCI등재

        Multifractal Characterization of Water Soluble Copper Phthalocyanine Based Films Surfaces

        Ştefan Ţălu,Sebastian Stach,Aman Mahajan,Dinesh Pathak,Tomas Wagner,Anshul Kumar,R. K. Bedi,Mihai Ţălu 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.4

        This paper presents a multifractal approach to characterize the structural complexity of 3D surface roughness of CuTsPc films on the glass and quartz substrate, obtained with atomic force microscopy (AFM) analysis. CuTsPc films prepared by drop cast method were investigated. CuTsPc films surface roughness was studied by AFM in tapping-mode™, in an aqueous environment, on square areas of 100 μm2 and 2500 μm2. A detailed methodology for CuTsPc films surface multifractal characterization, which may be applied for AFM data, was also presented. Analysis of surface roughness revealed that CuTsPc films have a multifractal geometry at various magnifications. The generalized dimension Dq and the singularity spectrum f(α) provided quantitative values that characterize the local scale properties of CuTsPc films surface morphology at nanometer scale. Multifractal analysis provides different yet complementary information to that offered by traditional surface statistical parameters.

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