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김경해,이준신,Devanesan Mangalaraj,Jinsu Yoo,정성욱,Suresh Kumar Dhungel 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.5
Hydrogenated silicon-nitride thin films were deposited by varying the silane-to-ammonia ratio in a plasma enhanced chemical vapor deposition (PECVD) system under relatively low temperature. This paper mainly investigates the SiN$_x$ deposition and the effect of rapid thermal processing (RTP) on the surface passivation and on the anti-reflection coating. Also, an extensive study has been carried out on the effect of the rapid thermal processing on the carrier lifetime, reflectance, chemical composition, refractive index, and interface states, which decides the final output of the cell. By varying the silane-to-ammonia ratio in the plasma gas, it was possible to modify the index of refraction (from 1.9 to 2.3) and the silicon surface state passivation properties of the films. The results indicate that the mid-gap surface state density in silicon can be reduced down to 1.1 $\times$ 10$^{10}$ cm$^{-2}$eV$^{-1}$ for the SiN$_x$:H layer deposited under an optimized silane-to-ammonia ratio. A noticeable feature from the $C$-$V$ studies on these films is that the interface state density ($D_{it}$) decreases as the firing temperature is increased. An improvement in the multicrystalline silicon solar cell parameters was observed, for cells with optimal SiN$_x$:H layers as compared to those with non-optimum SiN$_x$:H layers.
Ferromagnetism in Zn1−xCrxTe (x = 0.050.15) films grown on GaAs(1 0 0) substrate
Devaraj Soundararajan,고장면,Devanesan Mangalaraj,Devaraj Nataraj,Lev Dorosinskii,Jaime Santoyo-Salazar 한국물리학회 2010 Current Applied Physics Vol.10 No.3
Zn1-xCrxTe (x = 0.05, 0.15) films were grown on GaAs(1 0 0) substrate by thermal evaporation method. X-ray diffraction analysis showed the presence of ZnCrTe phase without any secondary phase. The surface was analyzed by high resolution magnetic force microscope and profile measurements showed orientation of magnetic domains in the range of 0.5–2 nm with increase of Cr content. Magnetic moment–magnetic field measurements showed a characteristic hysteresis loop even at room temperature. The Curie temperature was estimated to be greater than 300 K. From the electron spin resonance spectra, the valence state of Cr in ZnTe was found to be +2 with d2 electronic configuration. Hall effect study was done at room temperature and the result showed the presence of p-type charge carriers and hole concentration was found to increase from 5.95 × 1012 to 6.7 × 1012 m-3 when Cr content increases. We deduce the origin of ferromagnetic behavior based on the observed experimental results.