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- 저자 : Dang-Hui Wang (검색결과 4 건)
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Dang-Hui Wang,Sheng-Rui Xu,Jin-Cheng Zhang,Ke Chen,Zhi-Wei Bi,Lin-Xia Zhang,Fan-Na Meng,Shan Ai,Yue Hao 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.4
In this study, we report on the crystal quality of InGaN epifilms with different indium fractions grown at different growth temperatures on c-plane sapphire substrates with an AlN nucleation layer by using low-pressure metal-organic chemical-vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD), atom force microscopy (AFM), photoluminescence (PL) and Raman scattering measurements were employed to study the crystal quality, optical properties and strain condition of InGaN epifilms with increasing indium fraction (from 4.36% to 15.36%). Results show that InGaN epitaxial layers can be realized with a higher indium fraction at a lower temperature by inserting an AlN nucleation layer between the sapphire substrate and the GaN buffer layer and that the obtained InGaN epifilms have an improved crystal quality and a lower threading dislocation density.
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Dang-Hui Wang,Tian-Han Xu 한국광학회 2016 Current Optics and Photonics Vol.20 No.1
In this study, we have investigated a high-temperature AlN nucleation layer and AlGaN epilayers onc-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Highresolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope(SEM) and Raman scattering measurements have been exploited to study the crystal quality, surfacemorphology, and residual strain of the HT-AlN nucleation layer. These analyses reveal that the insertionof an LT-AlN nucleation layer can improve the crystal quality, smooth the surface morphology of theHT-AlN nucleation layer and further reduce the threading dislocation density of AlGaN epifilms. Themechanism of inserting an LT-AlN nucleation layer to enhance the optical properties of HT-AlN nucleationlayer and AlGaN epifilm are discussed from the viewpoint of driving force of reaction in this paper.
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Luminescence Properties of Blue Light-emitting Diode Grown on Patterned Sapphire Substrate
Dang-Hui Wang,Tian-Han Xu,Lei Wang 한국광학회 2017 Current Optics and Photonics Vol.1 No.4
In this study, we present a detailed investigation of luminescence properties of a blue light-emittingdiode using InGaN/GaN (indium component is 17.43%) multiple quantum wells as the active region grownon patterned sapphire substrate by low-pressure metal-organic chemical vapor deposition (MOCVD). HighresolutionX-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscopy(SEM), Raman scattering (RS) and photoluminescence (PL) measurements are employed to study the crystalquality, the threading dislocation density, surface morphology, residual strain existing in the active regionand optical properties. We conclude that the crystalline quality and surface morphology can be greatlyimproved, the red-shift of peak wavelength is eliminated and the superior blue light LED can be obtainedbecause the residual strain that existed in the active region can be relaxed when the LED is grown onpatterned sapphire substrate (PSS). We discuss the mechanisms of growing on PSS to enhance the superiorluminescence properties of blue light LED from the viewpoint of residual strain in the active region.
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Jingxian Yu,Hui Dang,Limin Wang 제어·로봇·시스템학회 2018 International Journal of Control, Automation, and Vol.16 No.5
For nonlinear batch processes with actuator faults and external disturbances, a fault-tolerant guaranteed cost controller is proposed based on fuzzy iterative learning control. The linear process model is treated by a sector nonlinear method into a T-S fuzzy faulty model, then the obtained model is transformed into the 2D Roesser equivalent model using the two-dimensional characteristics of batch processes. Based on the obtained model and the Lyapunov stability theory, the quadratic cost function is given and the fault-tolerant guaranteed cost controller guaranteeing that the closed-loop performance index is not more than an upper bound is designed to deal with the actuator fault. The fault-tolerant controller guarantees the stable operation of the faulty system and also has the best system performance with the controller gain and the maximum performance index being solved through constrained optimization. Finally, the simulation on a strong nonlinear reactor is carried out. It shows that the proposed method is more feasible and effective than other methods.
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