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Electrical and Optical Properties of a GaN n+-p Junction with High-Energy Electron Irradiation
이동욱,EunKyu Kim,ByungCheol Lee,DaeKon Oh 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.6
We report on the electrical and optical properties of a GaN \emph{n$^+$-p} junction diode structure that was grown by metal-organic chemical vapor deposition (MOCVD) and was fabricated and irradiated by using an electron beam with energies of 1 MeV and 2 MeV at electron irradiation dose of 1 $\times$ 10$^{15}$ cm$^{-2}$ and 1 $\times$ 10$^{16}$ cm$^{-2}$ for each energy. The deep level transient spectroscopy (DLTS) results show that defect states were generated in the GaN \emph{n$^+$-p} diodes after the electron irradiations. The defect densities and the energy locations of the defect states between the energy gap showed a dependence on the irradiation energy and dose. Also, the diode's optical responsivity was characterized in the ultraviolet region