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최우창,김성우,류지열,박성현,최혁환,이명교,권태하 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
The ammonia gas sensors were fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. We investigated the sensitivity and response time according to temperature variation and ammonia gas concentration. The sensors sputtered in oxygen atmosphere showed higher sensitivity than those sputtered in argon atmosphere. The Au(0.3 wt.%) doped-ZnO thin film sensors aged at 330 ℃ showed the maximum sensitivity of 28 and good response time at a working temperature of 250 ℃ and to 160 ppm ammonia gas. The Pt(0.1 wt.%) doped-ZnO thin film sensors showed the maximum sensitivity at a low working temperature of 200 ℃.
RF 마그네트론 스퍼터링 방법을 이용한 ZnO 가스센서의 암모니아 검지특성
최우창,최혁환,이명교,권태하 경북대학교 센서기술연구소 1998 센서技術學術大會論文集 Vol.9 No.1
The ammonia gas sensors were fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method in various sputtering gas atmosphere and substrate temperature. We investigated the sensitivity to ammonia gas concentration and working temperature. The sensors of thin films grown in oxygen sputtering gas showed higher sensitivity than those grown in argon sputtering gas. The sensors with ZnO-based thin film doped with MoO_(3)(0.875 wt.%) showed the maximum sensitivity of 70 at a working temperature of 250 ℃ and to ammonia gas of 160 ppm.
김성우,최우창,류지열,박성현,최혁환,이명교,권태하 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
The DMA(Dimethylamine) gas sensors were fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. We investigated the sensitivity and response time according to temperature variation and DMA gas concentration. The ZnO-based thin film sensors sputtered in oxygen atmosphere showed higher sensitivity than those sputtered in argon atmosphere. The ZnO-based thin film sensors doped with Al_(2)O_(3), In_(2)O_(3) and V_(2)O_(5) and sputtered in oxygen atmosphere showed the maximum sensitivity of 218(working temperature, 250 ℃, DMA gas, 160 ppm) and speedy response time. The ZnO-based thin film sensors doped with Al_(2)O_(3), In_(2)O_(3), TiO_(2) and V_(2)O_(5), sputtered in oxygen atmosphere and aged at 330 ℃ showed the maximum sensitivity of 156(working temperature, 250 ℃, DMA gas, 160 ppm).
박성현,최우창,김성우,류지열,최혁환,이명교,권태하 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
The microheaters with Si_(3)N_(4)(1500Å)/SiO_(2)(3000Å)/Si_(3)N_(4)( 1500Å) diaphragm were fabricated by thin film technology and silicon micromachining techniques. Pt and poly-Si(n+) materials were used as heater materials of microheater. Pt temperature sensor was fabricated to detect the temperature of microheaters. The thermal analysis including temperature distribution on diaphragm and power consumption of the microheater were executed by the FEM method and heat transfer equations. The power consumption of the Pt and poly-Si(n+) heaters were measured and compared to that of thermal analysis by FEM simulation.
DMA 가스 검지를 위한 ZnO 박막의 aging 효과
김성우,최혁환,이명교,권태하 경북대학교 센서기술연구소 1998 센서技術學術大會論文集 Vol.9 No.1
The DMA(Dimethylamine) gas sensors were fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. The characteristics of the sensors to aging conditions were investicated. The sensors with ZnO-based thin films aged for 72hrs at a temperature of 330 ℃ in oxygen showed high sensitivity, low working temperature and good linearity. The sensors with ZnO-based thin film doped with 0.1 wt.% Pt catalytics and aged for 72hrs at a temperature of 330 ℃ in oxygen showed the maximum sensitivity of 90 at a working temperature of 150 ℃ and to DMA gas of 160 ppm. The sensor was electrically stablized.
박성현,류지열,최혁환,권태하 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
Pt/Ti heater for TMA gas sensor was fabricated by RF magnetron sputtering method. It was grown on heated Si substrates of 250 ℃ at a pressure of about 5 mTorr in the pure argon gas with RF power of about 140 watts. Pt and Ti target alternated at intervals of even 2 minutes for 30 minutes. The heater which was grown in the ratio of 1 to 1(Pt:Ti) exhibited initial(room temperature) resistance of 45 ohms and a power dissipation of 9.6 watts up to 300℃ heater temperature. The width of resistor variance(R_(T)/R_(O)) exhibited 1.65. We can conclude that heater which was grown in the ratio of 1 to 1(Pt:Ti) is useful as a heater for TMA gas sensor
류지열,박성현,최혁환,권태하 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
The ZnO(zinc oxide) thin film sensors were manufactured by RF magnetron sputtering method and added up to 4 wt. % Al_(2)O_(3), 1 wt. % TiO_(2) and 0.2 wt. % V_(2)O_(5) on the basis of ZnO material for developing the high sensitive gas sensors which have practically moderate resistivity and the stability. They were also grown on heated SiO_(2)/Si substrates of 250 ℃ at a pressure of about 10 mTorr in the pure oxygon gas with a power of about 80 watts for 10 minutes. To manufacture the thin film of the more stable high sensitivity, the thin films were also annealed from 400 ℃ to 800 ℃ and the thin films which were annealed with 700℃ for 60 minutes in the pure oxygon gas exhibited a good properties. The thin film grown in this conditions exhibited the sensitivity of maximum 550 in TMA gas concentration 160 pμm and exhibited a good stability and excellent linearity.
(Pb,La)TiO_3/LiTaO_3/(Pb,La)TiO_3 다층 강유전 박막을 이용한 초전형 적외선 센서
성세경,이두현,최혁환,이명교,권태하 한국센서학회 2002 센서학회지 Vol.11 No.4
초전형 적외선 센서를 제작하기 위하여 rf 마그네트론 스퍼터링법으로 (Pb,La)TiO_3(PLT)/LiTaO_3(LTO)/PLT 강유전 박막을 증착한 후 급속 열처리하여 열처리 온도와 시간에 따른 결정성을 조사하였다. 강유전 박막의 C축 배향도에 따른 비유전율 및 유전손실을 측정하고 C축 배향도가 가장 큰 강유전 박막으로 제작된 센서에 대해 초전계수를 측정하여 센서의 전압응답에 대한 성능지수(F_V)와 감도에 대한 성능지수(F_D)를 구하였다. 얻어진 F_V, F_D는 각각 6.15×10 exp (-10) C · cm/J, 1.98×10 exp (-8) C · cm/J였다. For fabrication of the pyroelectric IR sensor (Pb,La)TiO_3(PLT)/LiTaO_3(LTO)/PLT ferroelectric thin films was deposited by rf magnetron sputtering followed by rapid thermal annealing and the crystallinity as a function of annealing temperature and time was investigated. Permittivity and dielectric loss factor of ferroelectric thin films as a function of c-axis preffered orientation was measured. Also pyroelectric coefficient of ferroelectric thin films with largest c-axis preffered orientation was measured and obtain figure of merit of voltage response(F_V) and detectivity(F_D). In this case F_V, F_D was 5.63×10 exp (-10) C · cm/J, 1.98×10 exp (-8) C · cm/J, respectively.
최혁환(Hyek-Hwan Choi),김성운(Sungun Kim),유흥식(Heung-Sik Yu) 한국정보기술학회 2021 Proceedings of KIIT Conference Vol.2021 No.11
스마트 모니터링 시스템(SMS: Smart Monitoring System)이 4차 산업혁명의 핵심 응용분야로 주목받고 있다. 현장의 엔드-디바이스(end-device)들과 포그 및 클라우드 컴퓨팅 기술들이 상호 연결되는 하이퍼-연동(hyper-connectivity)을 통한 IIoT(Industrial Internet of Things) 시스템 개발로 해당 모니터링 시스템 구현이 가능하다. 본 연구에서는 스마트 모니터링 시스템 구현에서 핵심 역할을 하는 에지-게이트웨이(edge-gateway) 시스템 구현에 대해 기술한다. 또한 그것의 동작과정에서 성능 분석도 설명한다. Smart Monitoring System (SMS) is attracting attention as a core application field of the 4th industrial revolution. It is possible by implementing the corresponding monitoring system by developing the Industrial Internet of Things (IIoT) systems through hyper-connectivity in which end-devices in the field and fog and cloud computing technologies are inter-operated. In this paper, we study the implementation of an edge-gateway system that plays a key role in smart monitoring system. In addition, the performance analysis during its operation is described.