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Kim, M. E.,Gorman, G. M.,Cho, N. M.,Kong, K. S.,Champaneria, C. N.,Greene, J. E.,Bruckner, C. L.,Walsworth, C. R.,Do, V. A.,Coleman, D. W.,Hew, P. R.,Chung, S. C.,Jung, W.,Seo, H. C.,Hwang, Y. I.,Chu, 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
This paper .discusses the GaAs HBT device and IC technology and its application to commercial wireless communication systems in the 0.8-6 GHz frequency range. Key performance/cost advantages of the GaAs HBT previously established over silicon bipolar and GaAs MESFET in this frequency regime are now being applied to critical RF front-end requirements of wireless voice and data communication systems. GaAs HBT components developed far such wireless systems include small-signal .and power functions which offer combinations of higher gain-bandwidth, higher efficiency, lower distortion, wider dynamic range and simpler design implementations. GaAs HBT/IC fabrication technology, device/IC performance and system applications are discussed.