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Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe<sub>2</sub> Heterostructure
Na, Junhong,Kim, Youngwook,Smet, Jurgen H.,Burghard, Marko,Kern, Klaus American Chemical Society 2019 ACS APPLIED MATERIALS & INTERFACES Vol.11 No.23
<P>Tunneling field-effect transistors (TFETs) are of considerable interest owing to their capability of low-power operation. Here, we demonstrate a novel type of TFET which is composed of a thin black phosphorus-tin diselenide (BP-SnSe<SUB>2</SUB>) heterostructure. This combination of 2D semiconductor thin sheets enables device operation either as an Esaki diode featuring negative differential resistance (NDR) in the negative gate voltage regime or as a backward diode in the positive gate bias regime. Such tuning possibility is imparted by the fact that only the carrier concentration in the BP component can be effectively modulated by electrostatic gating, while the relatively high carrier concentration in the SnSe<SUB>2</SUB> sheet renders it insensitive against gating. Scanning photocurrent microscopy maps indicate the presence of a staggered (type II) band alignment at the heterojunction. The temperature-dependent NDR behavior of the devices is explainable by an additional series resistance contribution from the individual BP and SnSe<SUB>2</SUB> sheets connected in series. Moreover, the backward rectification behavior can be consistently described by the thermionic emission theory, pointing toward the gating-induced formation of a potential barrier at the heterojunction. It furthermore turned out that for effective Esaki diode operation, care has to be taken to avoid the formation of positive charges trapped in the alumina passivation layer.</P> [FIG OMISSION]</BR>
Efficient Photothermoelectric Conversion in Lateral Topological Insulator Heterojunctions
Mashhadi, Soudabeh,Duong, Dinh Loc,Burghard, Marko,Kern, Klaus American Chemical Society 2017 Nano letters Vol.17 No.1
<P>Tuning the electron and phonon transport properties of thermoelectric materials by nanostructuring has enabled improving their thermopower figure of merit. Three-dimensional topological insulators, including many bismuth chalcogenides, attract increasing attention for this purpose, as their topologically protected surface states are promising to further enhance the thermoelectric performance. While individual bismuth chalcogenide nanostructures have been studied with respect to their photothermoelectric properties, nanostructured p-n junctions of these compounds have not yet been explored. Here, we experimentally investigate the room temperature thermoelectric conversion capability of lateral heterostructures consisting of two different three-dimensional topological insulators, namely, the n-type doped Bi2Te2Se and the p-type doped Sb2Te3. Scanning photocurrent microscopy of the nanoplatelets reveals efficient thermoelectric conversion at the p-n heterojunction, exploiting hot carriers of opposite sign in the two materials. From the photocurrent data, a Seebeck coefficient difference of Delta S = 200 mu V/K was extracted, in accordance with the best values reported for the corresponding bulk materials. Furthermore, it is in very good agreement with the value of Delta S = 185 mu V/K obtained by DFT calculation taking into account the specific doping levels of the two nanostructured components.</P>
Ko, Seungpil,Na, Junhong,Moon, Young-Sun,Zschieschang, Ute,Acharya, Rachana,Klauk, Hagen,Kim, Gyu-Tae,Burghard, Marko,Kern, Klaus American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.49
<P>Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al2O3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W-1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.</P>