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Performance improvement of amorphous indium-gallium-zinc oxide ReRAM with SiO2 inserting layer
Yanli Pei,Biaoren Mai,Xiaoke Zhang,Ruiqin Hu,Ya Li,Zimin Chen,Bingfeng Fan,Jun Liang,Gang Wang 한국물리학회 2015 Current Applied Physics Vol.15 No.4
In this study, the resistive switching performance of amorphous indiumegalliumezinc oxide (a-IGZO) resistive switching random-access memory (ReRAM) was improved by inserting a thin silicon oxide layer between silver (Ag) top electrode and a-IGZO resistive switching layer. Compared with the single a-IGZO layer structure, the SiO2/a-IGZO bi-layer structure exhibits the higher On/Off resistance ratio larger than 103, and the lower operation power using a smaller SET compliance current. In addition, good endurance and excellent retention characteristics were achieved. Furthermore, multilevel resistance states are obtained through adjusting SET compliance current and RESET stop voltage, which shows a promise for high-performance nonvolatile multilevel memory application.