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Choi, Eun Young,Kim, Jincheol,Lim, Sean,Han, Ekyu,Ho-Baillie, Anita W.Y.,Park, Nochang Elsevier 2018 Solar energy materials and solar cells Vol.188 No.-
<P><B>Abstract</B></P> <P>In this work, we employ atomic layer deposition (ALD) to form Al<SUB>2</SUB>O<SUB>3</SUB> layer as an encapsulant for perovskite solar cells (PSCs). Al<SUB>2</SUB>O<SUB>3</SUB> layer deposited at temperature as low as 95 °C achieves water vapor transmission rate (WVTR) of 1.84 × 10<SUP>−2</SUP> g m<SUP>−2</SUP> d<SUP>−1</SUP> at 45 °C–100%RH when thermal ALD is used. In order to test the moisture barrier capability of Al<SUB>2</SUB>O<SUB>3</SUB> layer for PSCs, mesoporous perovskite devices, with spiro-OMeTAD or PTAA as hole transport layer (HTM) encapsulated by 50 nm Al<SUB>2</SUB>O<SUB>3</SUB> film, are exposed to 65 °C–85%RH for 350 h and their stabilities are monitored. We find that the color of perovskite does not change after 350 h of exposure regardless of the type of HTM used. With regards to Th-ALD encapsulated devices, PTAA based PSCs experienced a smaller power conversion efficiency (PCE) drop than spiro-OMeTAD based PSCs after thermal stress at 65 °C. This is due to the presence of pinholes within spiro-OMeTAD layer after thermal stress which are not observed in PTAA. Finally, we successfully achieve excellent durability test results for mesoporous (HC(NH<SUB>2</SUB>)<SUB>2</SUB>PbI<SUB>3</SUB>)<SUB>0.85</SUB>(CH<SUB>3</SUB>NH<SUB>3</SUB>PbBr<SUB>3</SUB>)<SUB>0.15</SUB>/PTAA devices encapsulated by 50 nm Al<SUB>2</SUB>O<SUB>3</SUB> with less than 4% drop in PCE after 7500 h (> 10 months) of exposure to 50%RH under room temperature.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The WVTR values of 50 nm Al<SUB>2</SUB>O<SUB>3</SUB> layers is 1.84 x 10<SUP>−2</SUP> g m<SUP>−2</SUP> d<SUP>−1</SUP> at 45 °C–85 %RH. </LI> <LI> PTAA is more stable than spiro-OMeTAD during ALD process. </LI> <LI> Pinholes are formed within spiro-OMeTAD layer under thermal stress. </LI> <LI> PTAA-based devices experiences less than 4% drop after 7500 h of 50 %RH at room temperature. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>Synopsis: This research focused on the method to enhance the stability of perovskite solar cells via Al<SUB>2</SUB>O<SUB>3</SUB> thin film encapsulation. Additionally, degradation mechanism is investigated during ALD process.</P> <P>[DISPLAY OMISSION]</P>