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Anil Ahlawat,Manoj Pandey,Sujata Pandey 대한전자공학회 2006 Journal of semiconductor technology and science Vol.6 No.3
An artificial neural network model for the microwave characteristics of an InGaAs/InP hemt for 70 ㎚ gate length has been developed. The small-signal microwave parameters have been evaluated to determine the transconductance and drain-conductance. We have further investigated the frequency characteristics of the device. The neural network training have been done using the three layer architecture using Levenberg-Marqaurdt Backpro pagation algorithm. The results have been compared with the experimental data, which shows a close agreement and the validity of our proposed model.
Ahlawat, Anil,Pandey, Manoj,Pandey, Sujata The Institute of Electronics and Information Engin 2006 Journal of semiconductor technology and science Vol.6 No.3
An artificial neural network model for the microwave characteristics of an InGaAs/InP hemt for 70 nm gate length has been developed. The small-signal microwave parameters have been evaluated to determine the transconductance and drain-conductance. We have further investigated the frequency characteristics of the device. The neural network training have been done using the three layer architecture using Levenberg-Marqaurdt Backpropagation algorithm. The results have been compared with the experimental data, which shows a close agreement and the validity of our proposed model.
Noise Analysis of Sub Quarter Micrometer AlGaN/GaN Microwave Power HEMT
Tyagi, Rajesh K.,Ahlawat, Anil,Pandey, Manoj,Pandey, Sujata The Institute of Electronics and Information Engin 2009 Journal of semiconductor technology and science Vol.9 No.3
An analytical 2-dimensional model to explain the small signal and noise properties of an AlGaN/GaN modulation doped field effect transistor has been developed. The model is based on the solution of two-dimensional Poisson's equation. The developed model explains the influence of Noise in ohmic region (Johnson noise or Thermal noise) as well as in saturated region (spontaneous generation of dipole layers in the saturated region). Small signal parameters are obtained and are used to calculate the different noise parameters. All the results have been compared with the experimental data and show an excellent agreement and the validity of our model.
Noise Analysis of Sub Quarter Micrometer AlGaN/GaN Microwave Power HEMT
Rajesh K. Tyagi,Anil Ahlawat,Manoj Pandey,Sujata Pandey 대한전자공학회 2009 Journal of semiconductor technology and science Vol.9 No.3
An analytical 2-dimensional model to explain the small signal and noise properties of an AlGaN/GaN modulation doped field effect transistor has been developed. The model is based on the solution of twodimensional Poisson’s equation. The developed model explains the influence of Noise in ohmic region (Johnson noise or Thermal noise) as well as in saturated region (spontaneous generation of dipole layers in the saturated region). Small signal parameters are obtained and are used to calculate the different noise parameters. All the results have been compared with the experimental data and show an excellent agreement and the validity of our model.