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2 R.A.Pucel, "Statz,Advances in electronics and electron physics" Academic 195-265, 1975
3 Lee Sunglae, "Numerical noise model for the AlGaN/GaN HEMT" 2004
4 H.Statz, "Noise characteristics of gallium arsenide field effect transistor" ED-21 : 549-562, 1974
5 T.Felgentreff, "Noise Parameter Modeling of HEMTs with resistor temperature noise sources" 853-856, 1994
6 J.C. De Jaeger, "Noise Assessment of AlGaN/GaN HEMTs on Si or SiC Substrates:Application to X-band low Noise Amplifiers" 229-, 2005
7 Y.T. Sullivan, "Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field effect transistor" 71 (71): 2794-2796, 1997
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9 J.Deng, "Low Frequency and Microwave Noise Characteristics of GaN and GaAs-based HFETs" 2001
10 S. Nuttinck, "Highfrequency noise in AlGaN/GaN HFETs" 13 : 149-151, 2003
1 T.M.Brookes, "The noise properties of high electron mobility transistor" ED-33 : 52-57, 1986
2 R.A.Pucel, "Statz,Advances in electronics and electron physics" Academic 195-265, 1975
3 Lee Sunglae, "Numerical noise model for the AlGaN/GaN HEMT" 2004
4 H.Statz, "Noise characteristics of gallium arsenide field effect transistor" ED-21 : 549-562, 1974
5 T.Felgentreff, "Noise Parameter Modeling of HEMTs with resistor temperature noise sources" 853-856, 1994
6 J.C. De Jaeger, "Noise Assessment of AlGaN/GaN HEMTs on Si or SiC Substrates:Application to X-band low Noise Amplifiers" 229-, 2005
7 Y.T. Sullivan, "Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field effect transistor" 71 (71): 2794-2796, 1997
8 S.S.H. Hsu, "Low noise AlGaN/GaN MODFETs with high breakdown and power characteristics" 229-232, 2001
9 J.Deng, "Low Frequency and Microwave Noise Characteristics of GaN and GaAs-based HFETs" 2001
10 S. Nuttinck, "Highfrequency noise in AlGaN/GaN HFETs" 13 : 149-151, 2003
11 M.N.Yoder, "Gallium nitride:Past,present and future" 3-12, 1997
12 M.S.Shur, "GaN based transistors for high power applications" 42 (42): 2131-2138, 1998
13 U. K. Mishra, "GaN based microwave power HEMT" 878-883, 1998
14 K.Kamei, "Extremely low – noise 0.25μm gate HEMT" 541-546, 1985
15 S. N. Mohammad, "Emerging gallium nitride based devices" 83 : 1306-1355, 1995
16 Bernd-Ulrich H. Klepser, "Analytical Bias Dependent Noise Model for InP HEMT’s" 42 (42): 1882-1889, 1995
17 R.K.Tyagi, "An analytical two dimensional model for AlGaN/ GaN HEMT with polarization effects for high power applications" 38 : 877-883, 2007
18 C.S. Chang, "An analytical model for HEMT using new velocity field dependence" ED 34 : 1456-1462, 1987
19 Wu Lu, "AlGaN/GaN HEMT on SiC with over 100 GHz ft and Low Microwave Noise" 48 (48): 581-585, 2001
20 V.Kumar, "AlGaN/GaN HEMT in SiC with fT of over 120GHz" 23 : 455-457, 2002
21 A.F.M. Anwar, "A noise model for high electron mobility transistors" 41 (41): 2087-2092, 1994
22 R. K. Tyagi, "A new two-dimensional C–V model for prediction of maximum frequency of oscillation (fmax) of deep submicron AlGaN/GaN HEMT for microwave and millimeter wave applications" 39 (39): 1634-1641, 2008
23 Hikaru Hida, "A new Low-Noise AlGaAs/GaAs 2 DEG FET with a surface undoped layer" ed-33 (ed-33): 601-607, 1986