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- 저자 : Ali Madouri (검색결과 2 건)
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Refka Mimouni,Adel Souissi,Ali Madouri,Karem Boubaker,Mosbah Amlouk 한국물리학회 2017 Current Applied Physics Vol.17 No.8
In this work, we aimed an effective low-cost system for water purification from Methylene Blue using the photocatalytic performance of (Cr,In) codoped ZnO sprayed thin films under sunlight irradiation. XRD analysis demonstrate that the samples crystallized in würtzite ZnO phase, with a privileged orientation of crystallites towards (002) direction parallel to c-axis. The obtained images of AFM and SEM micrographs showed the enhancement of the roughness of ZnO films by codoping. In addition, the optical investigations indicated that the band gap values of (Cr,In) codoped ZnO thin films decreases from 3.3 eV to 3.1 eV in terms of (Cr, In) contents, whence, more solar energy can be exploited for photocatalytic reactions. Likewise, from PL study, the decrease of UV intensity peak by codoping points out the recombination inhibition in ZnO thin films. Also, the presence of defects demonstrated by visible emission has an important role in photocatalysis because on the surface of defects, surface redox reactions are taking place. So, they act as active sites of (Cr,In) codoped ZnO photocatalyst. Moreover, the effect of hydroxide OH radicals and the superoxide anion radicals (O2-) in photocatalytic mechanism for Methylene Blue degradation was discussed. Furthermore, (Cr,In) codoped ZnO thin films showed an excellent photodegradation efficiency under sunlight irradiation and present high recycling performance even after three re-use cycles.
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Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures
Arezki, Hakim,Boutchich, Mohamed,Alamarguy, David,Madouri, Ali,Alvarez, José,Cabarrocas, Pere Roca i,Kleider, Jean-Paul,Yao, Fei,Hee Lee, Young IOP 2016 Journal of Physics, Condensed Matter Vol.28 No.40
<P>Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO<SUB>2</SUB>/Si substrates, capped by n‑ or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq<SUP>−1</SUP> to 1260 Ω sq<SUP>−1</SUP> for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.</P>
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