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RISS 인기검색어
- 검색키워드
- 저자 : A.C.Rastogi (검색결과 6 건)
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KiranJain,R.K.Sharma,SandeepKohli,K.N.Sood,A.C.Rastogi 한국물리학회 2003 Current Applied Physics Vol.3 No.2, 3
Cd-In-Te films were electro-deposited potentiostatically over SnO2:F coated glass substrates from aqueous acidic solutionscontainingCdSO 4, InCl3 and TeO2 at 85 .C. Cyclic voltammetric studies were carried out to study the growth process and thepotential range for ternary CdInTe thin film deposition. Crystalline structure and surface morphological studies were carried outOptical transmission studies showed a direct band structure and the band gap of the deposited film change with the depositionpotential. A typical decrease from 1.2 to 1.1 eV in the optical band gap was observed on increasing the cathodic deposition potentialfrom)0.5 to)0.54 V (SCE).. 2002 Elsevier Science B.V. All rights reserved.
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Growth of CdS and CdTe thin films for the fabrication of n-CdS/p-CdTe solar cell
R.K.Sharma,KiranJain,A.C.Rastogi 한국물리학회 2003 Current Applied Physics Vol.3 No.2, 3
Thin n-CdS and p-CdTe lms were prepared by chemical spray pyrolysis and electrochemical deposition respectively. Excessivesulphur in the spray solution has promoted grain growth in CdS film. Microstructural features of CdS film with stoichiometric Cd:Sformity, reduced grain boundary losses of current and improved shunt resistance through inhibition of leakage of current at narrowgrain boundary or void site is expected and is indeed observed. Electrodeposition of CdTe films, beside the eect of the inherentprocess parameters, is also aected by crystalline and microstructural features of the underlyingCdS. Nucleation of CdTe film isremarkably aected by CdS film spray deposited over glass substrate. Cell performance considerably depends upon the windowlayer CdS and the properties of sprayed CdS film depends considerably on the Cd:S ratio in the spray solution. A higher S content inCdS film resistivity. A typical increase in cell eciency was found to increase from 8% to 10.5% usingCdS film with Cd:S ratio as1:1.1 and 1:1.3 respectively.. 2002 Elsevier Science B.V. All rights reserved.
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Ramezani daevish, S.,Rastogi, A.C.,Bhatnagar, P.K. 한국재료학회 1995 Fabrication and Characterization of Advanced Mater Vol.2 No.e3
Crystalline structure induced effecs on the ferroelectric and current conduction properties in electron beam deposited PZT thin films are described. $TiO_2$ dispersion in PZT reduces dielectric constant and charge storage density to 270 and $3.5\;{\mu}C/cm^2$ and increases carrier density. Pyrochlore PZT inclusion cause further reduction to 60 and $77fC/cm^2$ but have no effect on the microscpic polarization. Activated conduction energy 0.25-0.3eV is observed in $TiO_2$ mixed PZT. Low field conduction is ohmic and changes to space charge limited at a threshold field $8{\times}10^4\;V/cm$. Inclusion of pyrochlore phase causes deep traps ${\thickapprox}5{\times}10^18cm^-3$ and increased hole density of ${\thickapprox}\;3{\times}10^11\;cm^-3$.
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S.N.Sharma,SandeepKohli,A.C.Rastogi 한국물리학회 2003 Current Applied Physics Vol.3 No.2, 3
CdTe:TiO2 nanocrystalline films with varying volume fraction of CdTe were prepared by rf magnetron sputtering from acomposite TiO2centration. It was found that thermally treated films were Cd-rich and were stress free and had lower resistivity values. Field de-pendent current measurements showed that nanocrystalline films upon thermal treatment in the range 250300.C exhibit anunusual current peak under certain conditions of field and temperature. The current peak was associated with the presence of Cd-related defects in the CdTe lattice. The threshold temperature for the formation of Cd-related defects shifted to lower values for Cd-decient films.. 2002 Elsevier Science B.V. All rights reserved.
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Electrochemically deposited bismuth telluride thin films
SantoshGolia,M.Arora,R.K.Sharma,A.C.Rastogi 한국물리학회 2003 Current Applied Physics Vol.3 No.2, 3
Thin films ofbismuth telluride grown by electrochemical deposition technique on conducting glass and Mo sheet substrates, werecharacterized for their structural, morphological, optical and compositional analysis. These studies revealed polycrystalline an-isotropic and layered structure ofthese lms with dierent compositional stoichiometry. In the present work electrochemical de-application since it has a narrow optical energy band gap of0.13 eV. In this deposition process dierent lm growth parameters wereoptimized to get good quality ofcompositionally uniform bismuth telluride thin lm. XRD analysis revealed a hexagonal symmetrywith largec-axis lattice constants (Bi2Te3, B i2þ XTe3. X).. 2002 Elsevier Science B.V. All rights reserved.
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Optical properties of CdS nanoclusters: effects of size, stoichiometry and alloying with Ag2S
R.K.Sharma,S.N.Sharma,A.C.Rastogi 한국물리학회 2003 Current Applied Physics Vol.3 No.2, 3
The optical absorption and photoluminescence (PL) properties of nanosize CdS clusters synthesized by chemical bath depositiontechnique using precursor chemicals of high purity CdCl2, thiourea and NH4by the reaction rate, concentration of the reactants of the chemical bath and thickness of the lm. Relative to bulk crystals, the bandgap (Eg . 2:5 eV) of CdS clusters is signicantly blue-shifted with decreasing cluster size. CdS nanoclusters present a mixed hexa-gonal/cubic structure, which indicates that CdS formation occurs primarily via ‘‘ion-to-ion’’ process. Scanning electron micro-scopic studies of CdS lms revealed that the lms are composed of domains, which are formed from the coalescence of smallerAg2S alloying with the CdS nanoclusters show that surface related states of one material can be excited through states of a dierentinterior material.. 2002 Elsevier Science B.V. All rights reserved.
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