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AUSA에서 무엇을 배우나–1989 미 육군협회 연차총회 및 병기전시회를 중심으로
심준환,Sim, Jun-Hwan 한국방위산업진흥회 1990 國防과 技術 Vol.- No.135
현재 AUSA의 군인 및 민간인등 개인회원은 15만명 이상이며, 찬조회원인 업체는 3천6백개사에 이른다. 개인회원은 강제가 아닌 임의이지만, 군사학교나 군부대에서는 장교, 하사관, 사병 및 각 후보생에게 입회를 권장하고 있다. AUSA는 학술연구, 홍보 및 병기의 전시 이외에도 복리후생업무도 취급하고 있다. 요금이 낮은 보험, 디스카운트 물자의 알선등이 그 일례이다. 해군, 해병대, 공군에도 AUSA와 유사한 사업을 하는 단체가 있다
선택적인 다공질 실리콘 에칭법을 이용한 압저항형 실리콘가속도 센서의 제조
심준환,김동기,조찬섭,태흥식,함성호,이종현 ( Jun Hwan Sim,Dong Ki Kim,Chan Seob Cho,Heung Sik Tae,Sung Ho Hahm,Jong Hyun Lee ) 한국센서학회 1996 센서학회지 Vol.5 No.5
A piezoresistive silicon acceleration sensor with 8 beams, utilized by an unique silicon micromachining technique using porous silicon etching method which was fabricated on the selectively diffused (111)-oriented n/n/n silicon subtrates. The width, length, and thickness of the beam was 100 ㎛, 500 ㎛, and 7 ㎛, respectively, and the diameter of the mass paddle (the region suspended by the eight beams) was 1.4 mm. The seismic mass on the mass paddle was formed about 2 mg so as to measure accelerations of the range of 50g for automotive applications. For the formation of the mass, the solder mass was loaded on the mass paddle by dispensing Pb/Sn/Ag solder paste. After the solder paste is deposited, Heat treatment was carried out on the 3-zone reflow equipment. The decay time of the output signal to impulse excitation of the fabricated sensor was observed for approximately 30 ms. The sensitivity measured through summing circuit was 2.9 mV/g and the nonlinearity of the sensor was less than 2% of the full scale output. The output deviation of each bridge was ±4%. The cross-axis sensitivity was within 4% and the resonant frequency was found to be 2.15 kHz from the FEM simulation results.
( 111 ) 실리콘 웨이퍼를 이용한 6빔 가속도센서의 유한요소법 해석
심준환 ( Jun-Hwan Sim ),김동권 ( Dong-Kwon Kim ),서창택 ( Ch’ang-Taeg Seo ),류인식 ( In-Sik Yu ),이종현 ( Jong-Hyun Lee ) 한국센서학회 1997 센서학회지 Vol.6 No.5
In this paper, the analyses of the stress disturibution and frequency characteristics of silicon microstructures for an accelerometer were performed using the general purpose finite element simulation program, ANSYS. From the analyses, we determined the parameter values of a new 6-beam piezoresistive accelerometer applicable to the accelerometer`s specification in airbag system of automobile. Then, the mass paddle radius, beam length, beam width, and beam thickness of the designed accelerometer were 500 ㎛, 350 ㎛, 100 ㎛, and 5 ㎛, respectively and two different seismic masses with 0.4 mg and 0.8 mg were defined on the same sensor structure. The designed 6-beam accelerometers were fabricated on the selectively diffused (111)-oriented n/n^+/n silicon substrates and the characteristics of the fabricated accelerometers were investigated. Then, we used a micromachining technique using porous silicon etching method for the formation of the micromechanical structure of the accelerometer.
조찬섭,심준환,이석수,이종현,Cho, Chan-Seob,Sim, Jun-Hwan,Lee, Seok-Soo,Lee, Jong-Hyun 한국센서학회 1992 센서학회지 Vol.29 No.3
실리콘 기판을 HF용액 내에서 양극반응을 시켜 electropolishing법 또는 PSL 형성법으로 센서와 actuator에 유용한 다양한 모양의 실리콘 미세 기계구조를 제조하였다. 미세구조는 시편의 결정면에 관계없이 형성되었으며, 저농도 도핑된 단결정 실리콘이다. $n^{+}/n$ 실리콘 시편을 HF용액(20-48%)내에서 양극반응시켜 $n^{+}$ 영역에 선택적으로 PSL을 형성하였으며, HF농도, 반응전압 및 반응시간에 따른 PSL 형성의 특성을 조사였다. $n^{+}$ 영역에만 PSL이 형성되었으며 PSL의 다공도는 HF 농도 증가에 따라 감소하였으며, 반응전압에는 무관하였다. $n/n^{+}/n$형 구조를 이용하여 미세구조를 제조한 경우, 식각된 실리콘 표면이 균일하고 cusp가 제거되었으며, 미세구조의 두께는 전 영역을 통하여 n-epi.층의 두께로 일정하였다. HF용액(5 wt%)에서의 양극반응과 planar기술을 이용하여 가속도센서를 제조하여 기존의 IC 공정기술과 함께 사용이 가능함을 확인하였다. 또 모터의 회전자, 기어 등의 미세 기계구조를 PSL 형성법으로 제조하고 SEM 사진으로 조사하였다. Some silicon micromechanical structures useful in sensors and actuators have been fabricated by electropolishing or porous silicon formation technique by anodic reaction in HF solution. The microstructures were lightly doped single crystal silicon and the formation was isotropic independent of crystal directions. Porous silicon layer(PSL) was formed selectively in $n^{+}$ region of $n^{+}/n$ silicon structure by anodic reaction in concentrated HF(20-48%) solution. Characteristics of the formed PSL were investigated along with change of the reaction voltage, HF concentration and the reaction time. PSL was formed only in $n^{+}$ region. The porosity of the PSL was decreased with the increase of HF concentration and independent of reaction voltage. For the case of $n/n^{+}/n$ structures, the etched surface of silicon was fairly smooth and a cusp was not found. The thickness of the microstructures was the same as that of the epitaxial n-Si layer and good uniformity. We have fabricated acceleration sensors by anodic reaction in HF solution(5 wt%) and planar technology. The process was compatible with conventional It fabrication technique. Various micromechanical structures, such as rotors of motor, gears and linear actuator, were also fabricated by the technique and examined by SEM photographs.
류창우,심준환,이정희,이종현,배영호,허증수,Ryu, Chang-U,Sim, Jun-Hwan,Lee, Jeong-Hui,Lee, Jong-Hyeon,Bae, Yeong-Ho,Heo, Jeung-Su 한국재료학회 1996 한국재료학회지 Vol.6 No.5
다공질 실리콘층(Porous Silicon LayerLPSL)을 사용하여 저온 열산화 (50$0^{\circ}C$, 1시간)와 급속 열산화공정(rapid thermal oxidationLRTO)(115$0^{\circ}C$, 1분)을 통하여 저온 산화막을 제조하였다. 제조된 산화막의 특성을 IR흡수 스펙트럼, C-V 곡선, 절연파괴전압, 누설전류, 그리고 굴절률을 조사함으로써 알아보았다. 절연파괴전압은 2.7MV/cm, 누설전류는 0-50V 범위에서 100-500pA의 값을 보였다. 산화막의 굴절률은 1.49의 값으로서 열산화막의 굴절률에 근접한 값을 나타냈다. 이 결과로부터 다공질 실리콘층을 저온산화막으로 제조할 때, RTO공정이 산화막의 치밀화(densification)에 크게 기여함을 알 수 있었다.