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전자상자성공명을 이용한 Poly - Si / SiO₂ 박막의 결함연구 : 플라즈마 수소화처리에 따른 결함밀도의 변화
노승정(S. J. Noh),장혁규(H. K. Jang) 한국자기학회 1998 韓國磁氣學會誌 Vol.8 No.6
In order to reduce the defect density in poly-Si/SiO₂ thin films, where poly-Si is either undoped or doped by BF₂ implantation, the poly-Si/SiO₂ samples have been hydrogenated by rf plasmas of low temperature. Before hydrogenation, both Pb centers and E' centers were observed in the poly-Si(undoped)/SiO₂ and in the poly-Si(doped)/SiO₂. After 30 min hydrogenation, the Pb center was reduced by 80 % in the doped sample and by 76 % in the undoped sample and the E' center was not observed. After 90 min hydrogenation, however, increases of the Pb centers and regenerations of the E' center were observed in the undoped sample as well as in the doped one. Compared with the undoped sample, the increase of the Pb center in the doped one was more dominant.
이두형,노승정,Lee, D.H.,Noh, S.J. 한국진공학회 2007 Applied Science and Convergence Technology Vol.16 No.2
Atomic layer deposition(ALD)에 유도결합 플라즈마 소스를 채용하여 plasma enhanced ALD(PEALD)장치를 제작하고 플라즈마 발생 실험을 수행하였다. ALD와 PEALD를 이용하여 기판온도 $230^{\circ}C$에서 p-type Si(100)기판 위에 Co박막을 증착하였다. 이때, $Co_{2}(CO)_{6}$을 Co전구체로, 암모니아를 반응가스로, 아르곤을 캐리어(carrier) 및 퍼지(purge)가스로 사용하였다. 증착된 Co박막의 구성성분과 박막의 두께를 auger electron spectroscopy(AES)와 field emission scanning electron microscopy(FESEM)을 이용하여 분석하였다. ALD와 PEALD를 이용하여 증착된 Co박막에서 모두 불순물이 발견되었는데, PEALD의 경우 ALD에 비해 불순물의 양이 약 반으로 감소되었다. 암모니아 플라즈마가 Co전구체에 포함된 탄소와의 반응을 매우 효과적으로 유도하는 것으로 확인되었다. A plasma enhanced atomic layer deposition(PEALD) system has been constructed adopting an inductively coupled plasma(ICP) source with an ALD system, and its plasma generation was carried out. Cobalt thin films were deposited on a p-type Si(100) wafer at $230^{\circ}C$. $Co_{2}(CO)_{6}$ was used as a cobalt precursor, $NH_{3}$ as a reactant, and Ar as a carrier and purge gas. The properties of the thin films were investigated using field emission scanning electron microscopy(FESEM) and auger electron spectroscopy(AES). Large amounts of impurities were found in both the ALD film and the PEALD film, however, the amount of impurities in the PEALD film was reduced to about 50 % compared to that in the ALD film. It was found that $NH_{3}$ plasma, very effectively, induces the reaction with carbon in a cobalt precursor.
자기제한적 표면반응에 의한 ZnO 박막성장 및 기판온도에 따른 박막특성
이두형,권새롬,이석관,노승정,Lee, D.H.,Kwon, S.R.,Lee, S.K.,Noh, S.J. 한국진공학회 2009 Applied Science and Convergence Technology Vol.18 No.4
ZnO에 대한 박막증착 연구를 위하여 유도결합 플라즈마 원자층박막증착(inductively coupled plasma assisted atomic layer deposition: ICP-ALD) 장치를 제작하고, 장치에 대한 기본 공정조건을 설정하기 위하여 플라즈마를 유도하지 않은 상태에서 p-type Si(100) 기판 위에 ZnO 박막을 증착하는 다양한 실험을 수행하였다. Zn 전구체(precursor)로는 Diethyl zinc [$Zn(C_2H_5)_2$, DEZn]를, 반응가스(reaction gas)로는 $H_2O$를, 캐리어(carrier) 및 퍼지가스(purge gas)로는 Ar을 사용하였다. 기판온도 $150^{\circ}C$에서 DEZn, $H_2O$, Ar의 공급시간을 변화시켜가면서 자기제한적 표면반응(self-limiting surface reaction)에 의한 박막성장조건을 성공적으로 유도하였다. 기판온도를 변화시켜가면서($90{\sim}210^{\circ}C$) 증착실험을 반복하여, 본 장치에 대한 ALD 공정온도(thermal ALD process window)를 확립하고 성장된 ZnO박막에 대한 증착특성, 결정성, 불순물 및 내부조성비등을 조사하였다. ALD 공정온도는 기판온도 $110{\sim}190^{\circ}C$로써 이 구간에서의 박막 평균증착률은 0.29 nm/cycle로 일정하게 나타났다. 기판온도가 높아질수록 결정성이 향상되어 ZnO(002) 피크가 우세하였다. 모든 ALD 공정온도에서 Zn와 O로만 구성된 고순도의 ZnO 박막을 실현하였는데, 온도가 높아질수록 Zn와 O의 비가 1에 근접하며 안정된 hexagonal wurtzite ZnO 구조의 박막이 성장되었다. An inductively coupled plasma assisted atomic layer deposition(ICP-ALD) system has been constructed for the deposition of ZnO thin films, and various experiments of ZnO thin films on p-type Si(100) substrates have been carried out to find the self-limiting reaction conditions for the ICP-ALD system under non-plasma circumstances. Diethyl zinc[$Zn(C_2H_5)_2$, DEZn] was used as the zinc precursor, $H_2O$ as the oxidant, and Ar as the carrier and purge gas. At the substrate temperature of $150^{\circ}C$, atomic layer deposition conditions based on self-limiting surface reaction were successfully obtained by series of experiments through the variation of exposure times for DEZn, $H_2O$, and Ar. ZnO deposition was repeated at different substrate temperatures of $90{\sim}210^{\circ}C$. As a result, the thermal process window(ALD window) for ZnO thin films was observed to be $110{\sim}190^{\circ}C$ and the average growth rate was measured to be constant of 0.29 nm/cycle. Properties of the film's microstructure and composition(Zn, O, etc.) were also studied. As the substrate temperature increases, the crystallinity was improved and ZnO(002) peak became dominant. The films deposited at all temperatures were high purity, and the films deposited at high temperatures had the composition ratio between Zn and O closer to one of a stable hexagonal wurtzite structure.
Ti-Al 반사막을 이용한 405 ㎚ LED의 광추출 효율 향상
김창연(C. Y. Kim),권새롬(S. R. Kwon),이두형(D. H. Lee),노승정(S. J. Noh) 한국진공학회(ASCT) 2008 Applied Science and Convergence Technology Vol.17 No.3
Metal organic chemical vapor deposition (MOCVD)를 이용하여 사파이어 기판 위에 405 ㎚의 파장을 갖는 GaN light-emitting diode (LED)를 제작하였다. LED의 InGaN 활성층에서 생성되어 칩의 후면으로 향하는 광자를 전면으로 반사시키기 위하여. 사파이어 가판 후면에 반사막을 증착하였다. 반사막으로는 Al을 사용하였으며, 사파이어 기판에 대한 Al 박막의 접착력을 개선하기 위하여 사파이어 기판 후면에 Ti를 먼저 증착한 후에 Al을 증착하였다. Ti-Al 반사막을 채용한 결과, 광추출 효율이 52% 향상되었다. GaN-based light-emitting diodes (LEDs) of a 405 ㎚ wavelength have been fabricated on a sapphire substrate by metal organic chemical vapor deposition (MOCVD). In order to reflect the photons, which are generated in the InGaN active region and emitted to the backside, to the front surface, a reflection layer was deposited onto the back of the substrate. Aluminum was used as the reflection layer and Al was deposited on the sample followed by Ti evaporation for firm adhesion of the reflection layer to the substrate. The light extraction efficiency was enhanced 52% by adoption of the Ti-Al reflection layer.
현준원(June Won Hyun),윤미영(Mi Young Yun),안상민(S. M. An),노승정(S. J. Noh),허영덕(Young-Duk Huh),박헌용(Heonyong Park),송예신(Y. S. Song),피재호(Jaeho Pyee),김경례(K. R. Kim),김성훈(H. S. Kim) 한국표면공학회 2004 한국표면공학회지 Vol.37 No.2
Nickel chloride coated protein chip plate was developed by using a spin coating method. The ability of histidine tagged protein adsorption was investigated at various solvents. The surface of plate has a large aggregated nickel complex with high density in water. However, the surface of plate has a very small size of aggregated nickel complex with low density in isopropanol. The ability of protein adsorption decreased as increasing the size of alkyl chain in various alcohol solvents. The mechanism on the ability of protein adsorption at the plate surface is discussed.
¹H Nuclear Magnetic Relaxation in Impure CuF₂ㆍ2H₂O
이창훈(C. H. Lee),이철의(C. E. Lee),노승정(S. J. Noh) 한국자기학회 1995 韓國磁氣學會誌 Vol.5 No.5
We have studied the temperature dependence of the ¹H NMR spin-lattice relaxation for the impure CuF₂ㆍ2H₂O over a temperature range from 77 K to room temperature. We find that the remperature dependence of the ¹H spin-lattice relaxation is dominated by the eletron spin-flip and the Raman process of eletron spin-lattice relaxation. The electron spin-flip exchange energy was calculated to be 1.8( ± 0.04) K.