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노승정 단국대학교 1999 論文集 Vol.34 No.-
In order to investigate the effects of plasma hydrogenation on polycrystalline-silicon (poly-Si) thin films, poly-Si films of 150 nm thickness were deposited on (100) single crystalline silicon wafers in a low-pressure chemical vapor deposition reactor. The poly-Si films were doped by BF_2 ion implantation of 80 keV and hydrogenated in a rf plasma reactor at 350 ℃ and 0.5 Torr. For analysis, electron paramagnetic resonance (EPR) and Raman spectroscopy measurements were carried out and the characteristic change in the poly-Si films was studied. As a result, the defect density in the poly-Si films was reduced after plasma hydrogenation and the reduction in the heavily doped films was more dominant.
노승정,사승훈,김희수 한국물리학회 2002 새물리 Vol.45 No.2
A cw e-beam plasma source has been constructed, and plasma generation at various pressures for thin film processes has been studied. Argon gas was used for plasma generation at pressures of 5 mTorr, 10 mTorr, 50 mTorr, and 100 mTorr. The voltage for electron acceleration was limited to values up to 50 V. The plasma density was varied from $\rm 1.3\times 10^{11} cm^{-3}$ to $\rm 8.5\times 10^{11} cm^{-3}$ for various pressures and voltages. By varying the pressure and the voltage, one can control the plasma density very effectively. The measured electron temperature was under 1 eV. Thus, an e-beam plasma source has the advantage of lowering the charge build up occurring in the thin-film process when using a plasma. 직류형 전자빔 플라즈마 소스를 제작하고, 실제 박막공정에서 요구되는 다양한 공정압력에서의 플라즈마 발생에 대하여 연구하였다. 반응기체로는 아르곤을 사용하였으며, 방전압력은 각각 5 mTorr, 10 mTorr, 50 mTorr 및 100 mTorr 그리고 가속전압은 50 V 이하로 제한하였다. 방전압력과 가속전압에 따라 플라즈마 밀도가 변화하는 것을 확인하였으며, $\rm 1.3\times 10^{11} cm^{-3}$에서 $\rm 8.5\times10^{11} cm^{-3}$의 밀도분포를 보였다. 이러한 특성을 이용하면 플라즈마 밀도를 매우 효율적으로 제어할 수 있다. 전자의 온도는 1 eV 이하로써 매우 낮은 값을 갖는 것으로 나타났으므로, 플라즈마 박막공정에서의 전하의 build up 현상을 줄이는 데 기여할 수 있다고 기대된다.
온도와 스트레스가 다결정실리콘 박막트랜지스터의 전류에 미치는 영향 연구
노승정 단국대학교 1998 論文集 Vol.33 No.-
PolySi PMOS TFTs for high density SRAM load devices have been studied. For experiments, the high performance TFT with an LDO(lightlydoped drain offset) structure was designed for 3 V operation and successfully fabricated using a hydrogen plasma process. A hot chuck was also manufactured to control the TFT temperature. The current characteristics of the TFT were investigated at various temperatures and the degradation characteristics of the TFT were also studied using an NBT(negative bias temperature) stress method. Off currents were drastically increased at high temperature. As a result, the TFT spends a high standby power at high temperature. The degradation due to electrical and thermal stresses resulted in a reduction of on currents. Thus, the reliability of the memory cell becomes reduced after the stress due to a degraded TFT performance.
전자상자성공명을 이용한 Poly - Si / SiO₂ 박막의 결함연구 : 플라즈마 수소화처리에 따른 결함밀도의 변화
노승정(S. J. Noh),장혁규(H. K. Jang) 한국자기학회 1998 韓國磁氣學會誌 Vol.8 No.6
In order to reduce the defect density in poly-Si/SiO₂ thin films, where poly-Si is either undoped or doped by BF₂ implantation, the poly-Si/SiO₂ samples have been hydrogenated by rf plasmas of low temperature. Before hydrogenation, both Pb centers and E' centers were observed in the poly-Si(undoped)/SiO₂ and in the poly-Si(doped)/SiO₂. After 30 min hydrogenation, the Pb center was reduced by 80 % in the doped sample and by 76 % in the undoped sample and the E' center was not observed. After 90 min hydrogenation, however, increases of the Pb centers and regenerations of the E' center were observed in the undoped sample as well as in the doped one. Compared with the undoped sample, the increase of the Pb center in the doped one was more dominant.
Development of two-dimensional hopping model along the [1 1] direction
Noh, S. J. 단국대학교 통계문제연구소 1994 數學 및 統計硏究 Vol.20 No.-
고전적인 홉핑 이론을 이용하여 [1 1] 결정 방향을 따라 전개하는 이차원 모델을 개발하였다. 미세적 관점에서의 물질의 비균일성은 홉핑 활성화 에너지 장벽의 높이를 변화시키는 방법을 사용하고, 이에 다른 전하 밀도의 변화는 전기장과 확산에 의한 정상-상태 방정식을 만족하도록 홉핑 방정식을 유도하였다. 물질의 3차원 성질은 2차원 평면의 z-축에 대한 주기적인 특성을 이용하여 수학적인 근사법을 취하였다.