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FBAR 소자의 압전층으로 사용되는 ZnO 박막의 증착시 ALD를 이용한 2-step법 적용에 관한 연구
이순범(Soon-Bum Lee),박성현(Sung-Hyun Park),이능헌(Neung-Heon Lee),신영화(Young-Hwa Shin) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
In this study, the 2-step methode by ALD equipment was used to improve the characteristics of ZnO thin films used in a piezoelectric layer when the FBAR devices of a SMR type are fabricated. The Height of formed buffer layer was 400Å and ZnO thin film of 13600Å was deposited by RF sputter on the buffer layer. When ZnO thin films are deposited, deposition conditions such as pressure, injection time of source and purge time were changed variously. The characteristics of piezoelectric layer such as a crystal orientation and micro-structure of deposited ZnO thin films were studied by SEM, AFM and XRD.
ZnO를 이용한 air-gap 형태의 FBAR 소자 제작에 대한 연구
박성현(Sung-Hyun Park),이순범(Soon-Beom Lee),신영화(Young-Hwa Shin),이능헌(Neung-Heon Lee),이상훈(Sang-Hoon Lee),추순남(Soon-Nam Chu) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
Air-gap type film bulk acoustic wave resonator device using ZnO for piezoelectric layer and sacrifice layer, deposited by RF magnetron sputter with various conditions, fabricated in this study. Also, membrane(SiO₂) and top and bottom electrode(both Al) of piezoelectric layer deposited by RF magnetron sputter. Using micro electro mechanical systems(MEMS) technique, sacrifice layer removed and then air-gap formed. The results of each process checked by XRD, AFM, SEM to obtain good quality device.
RF 스퍼터를 이용하여 미리 가열된 기판을 냉각하며 증착한 ZnO 박막의 c축 배향성 향상에 관한 연구
박성현(Sung-Hyun Park),이순범(Soon-Beom Lee),신영화(Young-Hwa Shin),이능헌(Neung-Heon Lee),지승한(Seung-Han Ji),권상직(Kwon-Sang Jik) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
In this paper, ZnO thin films were prepared on p-Si(100) by RF magnetron sputtering. Before the depostion, the substrates were pre-heated to 500, 400, 300, 200 ℃ or not. During the deposition, the substrates were cooled down naturally or kept and then the films were investigated by XRD(X-ray diffraction) and SEM (scanning micro scope). It is showed the most outstanding result that the film was prepared on the substrate were cooled from 400 ℃. When the substrate was cooled from a certain temperature during deposition, it could be improve the c-axis orientation and useful for application of SAW(surface acoustic wave) filter and FBAR(film bulk acoustic wave resonator) device.