http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
MgO 버퍼층을 이용한 PZT 박막의 형성 및 특성 평가
김지미,전호승,강재경,최형봉,김철주 서울시립대학교정보기술연구소 2001 정보기술연구소 논문집 Vol.3 No.-
In this paper, we fabricated the MgO layer by sol-gel method and estimated possibility as a buffer layer for ferroelectric such as PZT. MgO(Magnesium Oxide) proposed as buffer layer of ferroelectric is already for much used as buffer layer in optic technology. There are many formation methods of MgO layer, but in this study, we selected the sol-gel method which is easy to control the content of material and possible for fabrication of uniform layer, then we formed thin layer through the composition of MgO and PZT solution, spin coating and annealing. To estimate the possibility as buffer layer about ferroelectric layer, we analyzed the physical and electrical characteristics about PZT on MgO layer.By SEM, AFM and XRD analysis, we could know facts that the surface condition of PZT on MgO was relatively smooth and the crystal orientation of PZT was enhanced by MgO layer. Due to the measurements of P-V, C-V and I-V characteristics of PZT/MgO capacitor structure, the polarization, fatigue and breakdown properties of PZT on MgO were much improved than those of PZT without MgO layer. Also, in MFIS structure, the PZT on MgO showed the stable memory property. These results could be compared to those of MgO buffer layer formed by sputtering, so, if studies about the composition of MgO solution and the formation of MgO layer are executed continuously, the fabrication process of MgO layer by sol-gel method can be applied as the process for buffer layer of ferroelectric.